SCHEMBL2331002

SCHEMBL2331002

CCCCc1c(N)ccc(-c2ccc(N)c(CCCC)c2CCCC)c1CCCC

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SKP2 Q13309 1/20 0.50
NPC1 O15118 2/20 0.36
MAPK1 P28482 2/20 0.36
RAB9A P51151 2/20 0.36
HPGD P15428 1/20 0.36
HTT P42858 1/20 0.36
NPSR1 Q6W5P4 1/20 0.36
NOS2 P35228 2/20 0.36
CYP1A2 P05177 1/20 0.34
CYP2C9 P11712 1/20 0.34
CYP2C19 P33261 1/20 0.34
GCGR P47871 1/20 0.34
SMN1; SMN2 Q16637 2/20 0.33
CA2 P00918 2/20 0.33
CNR1 P21554 1/20 0.33
CNR2 P34972 1/20 0.33
TLR8 Q9NR97 3/20 0.33
TLR7 Q9NYK1 1/20 0.33
HTR2A P28223 1/20 0.32
TP53 P04637 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17141908 0.94 SKP2 (0.44) SKP2RAB9AHPGDGCGRSMN1; SMN2
SCHEMBL1498868 0.91 SKP2 (0.57) SKP2NPC1MAPK1RAB9AHPGD
Hydrochloric Acid SCHEMBL6657545 0.89 SKP2 (0.55) SKP2NPC1MAPK1RAB9AHPGD
SCHEMBL27533901 0.85 SKP2 (0.42) SKP2NPC1RAB9AHPGDCYP1A2
SCHEMBL45792 0.84 SKP2 (0.50) SKP2RAB9AHPGDGCGRSMN1; SMN2
SCHEMBL4426814 0.83 SKP2 (0.55) SKP2NPC1MAPK1RAB9AHPGD
SCHEMBL5379073 0.82 SKP2 (0.40) SKP2NPC1RAB9AHPGDNOS2
SCHEMBL9516123 0.82 SKP2 (0.48) SKP2RAB9AHPGDSMN1; SMN2TLR8
SCHEMBL294503 0.82 SKP2 (0.48) SKP2RAB9AHPGDSMN1; SMN2TLR8
SCHEMBL5567215 0.82 SKP2 (0.48) SKP2RAB9AHPGDSMN1; SMN2TLR8

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1764647-B1 Use of a positive resist composition for immersion exposure, positive resist composition and immersion lithographic pattern-forming method using the same FUJIFILM CORP (JP) 2011-08-17 EP disclosed
EP-1764647-A2 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM Corporation (JP) 2007-03-21 EP disclosed