Known targets — ChEMBL curated mechanism
MMP1MMP13MMP7MMP8polrplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO
The experimentally established mechanism targets of Acridine. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.71 |
| ▸ | HPGD | P15428 | 3/20 | 0.71 |
| ▸ | MAPT | P10636 | 2/20 | 0.71 |
| ▸ | GLA | P06280 | 2/20 | 0.71 |
| ▸ | ACHE | P22303 | 1/20 | 0.71 |
| ▸ | GAA | P10253 | 3/20 | 0.52 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.52 |
| ▸ | HTR3A | P46098 | 1/20 | 0.52 |
| ▸ | STAT3 | P40763 | 1/20 | 0.52 |
| ▸ | NQO2 | P16083 | 2/20 | 0.48 |
| ▸ | TLR8 | Q9NR97 | 6/20 | 0.47 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.47 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.45 |
| ▸ | NPC1 | O15118 | 2/20 | 0.45 |
| ▸ | RAB9A | P51151 | 2/20 | 0.45 |
| ▸ | LMNA | P02545 | 1/20 | 0.45 |
| ▸ | POLB | P06746 | 1/20 | 0.45 |
| ▸ | PTBP1 | P26599 | 1/20 | 0.45 |
| ▸ | RCE1 | Q9Y256 | 1/20 | 0.45 |
| ▸ | PDE10A | Q9Y233 | 1/20 | 0.44 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Acridine SCHEMBL7894595 | 0.88 | ALDH1A1 (0.75) | ALDH1A1HPGDMAPTGLAACHE | |
| Phenazine SCHEMBL28805065 | 0.85 | MAPT (0.65) | ALDH1A1HPGDMAPTGLAACHE | |
| Acridine SCHEMBL29352289 | 0.84 | ALDH1A1 (1.00) | ALDH1A1HPGDMAPTGLAACHE | |
| Acridine SCHEMBL4972293 | 0.84 | ALDH1A1 (1.00) | ALDH1A1HPGDMAPTGLAACHE | |
| Acridine SCHEMBL8339 | 0.84 | ALDH1A1 (1.00) | ALDH1A1HPGDMAPTGLAACHE | |
| Acridine SCHEMBL1772714 | 0.84 | ALDH1A1 (1.00) | ALDH1A1HPGDMAPTGLAACHE | |
| Acridine SCHEMBL3045498 | 0.84 | ALDH1A1 (1.00) | ALDH1A1HPGDMAPTGLAACHE | |
| Acridine SCHEMBL29014290 | 0.84 | ALDH1A1 (0.68) | ALDH1A1HPGDMAPTGLAACHE | |
| Acridine SCHEMBL9413592 | 0.82 | ALDH1A1 (0.83) | ALDH1A1HPGDMAPTGLAACHE | |
| Acridine SCHEMBL17141399 | 0.82 | ALDH1A1 (0.83) | ALDH1A1HPGDMAPTGLAACHE |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-107615168-B | Radiation-sensitive composition | 日产化学工业株式会社 | 2023-12-19 | — | — | CN | disclosed |
| CN-117008420-A | Radiation-sensitive composition | 日产化学工业株式会社 | 2023-11-07 | — | — | CN | disclosed |
| CN-104281006-B | Radiation-ray sensitive composition | 三菱瓦斯化学株式会社 | 2019-01-22 | — | — | CN | disclosed |
| CN-108008600-A | Radiation-ray sensitive composition | 三菱瓦斯化学株式会社 | 2018-05-08 | — | — | CN | disclosed |
| CN-107615168-A | Radiation-sensitive composition | 日产化学工业株式会社 | 2018-01-19 | — | — | CN | disclosed |
| CN-106030417-A | Photosensitizing chemically amplified resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting | 东京毅力科创株式会社 | 2016-10-12 | — | — | CN | disclosed |
| CN-103102251-B | Radiation-ray sensitive composition | MITSUBISHI GAS CHEMICAL INC. (JP) | 2016-01-20 | — | — | CN | disclosed |
| CN-103282396-B | Aromatic hydrocarbon resin, composition for forming lithographic underlayer film, and method for forming multilayer resist pattern | MITSUBISHI GAS CHEMICAL CO | 2015-03-18 | — | — | CN | disclosed |
| CN-104281006-A | Radiation-sensitive composition | MITSUBISHI GAS CHEMICAL CO | 2015-01-14 | — | — | CN | disclosed |
| US-8808975-B2 | Positive resist composition for immersion exposure and pattern-forming method using the same | FUJIFILM CORPORATION (JP) | 2014-08-19 | — | — | US | disclosed |
| CN-103102251-A | Radiation-sensitive composition | MITSUBISHI GAS CHEMICAL CO | 2013-05-15 | — | — | CN | disclosed |
| CN-101889247-B | Composition for forming underlayer film for lithography and method for forming multilayer resist pattern | MITSUBISHI GAS CHEMICAL CO | 2013-04-03 | — | — | CN | disclosed |
| EP-1764647-B1 | Use of a positive resist composition for immersion exposure, positive resist composition and immersion lithographic pattern-forming method using the same | FUJIFILM CORP (JP) | 2011-08-17 | — | — | EP | disclosed |
| US-20100310991-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN-FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-12-09 | — | — | US | disclosed |
| CN-101889247-A | Composition for forming underlayer film for lithography and method for forming multilayer resist pattern | MITSUBISHI GAS CHEMICAL CO | 2010-11-17 | — | — | CN | disclosed |
| US-7803511-B2 | resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits | FUJIFILM CORPORATION (JP) | 2010-09-28 | — | — | US | disclosed |
| CN-101528653-A | Radiation-sensitive composition | MITSUBISHI GAS CHEMICAL CO (JP) | 2009-09-09 | — | — | CN | disclosed |
| EP-1764647-A2 | Positive resist composition for immersion exposure and pattern-forming method using the same | FUJIFILM Corporation (JP) | 2007-03-21 | — | — | EP | disclosed |
| US-20070042290-A1 | resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits | FUJI PHOTO FILM CO., LTD. | 2007-02-22 | — | — | US | disclosed |
| US-5193024-A | Forming bubbles in a dye solution within a cell and focusing a beam from a laser, vaporization solvent and illumination of solution | E. I. DU PONT DE NEMOURS AND COMPANY (US) | 1993-03-09 | — | — | US | disclosed |