SCHEMBL233695

SCHEMBL233695

[SiH3]C([SiH3])[SiH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19658328 0.67
SCHEMBL339497 0.61
SCHEMBL10527253 0.61
SCHEMBL30504 0.61
SCHEMBL949878 0.61
SCHEMBL2597609 0.61
SCHEMBL703343 0.61
SCHEMBL11407141 0.61
SCHEMBL3872276 0.61
SCHEMBL31627771 0.61

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 274 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10790139-B2 Deposition of silicon and oxygen-containing films without an oxidizer APPLIED MATERIALS, INC. (US) 2020-09-29 US claimed
CN-105899711-B Deposition of silicon and oxygen containing films in the absence of oxidizing agents 应用材料公司 2020-01-07 CN claimed
US-20160336174-A1 DEPOSITION OF SILICON AND OXYGEN-CONTAINING FILMS WITHOUT AN OXIDIZER APPLIED MATERIALS, INC. (US) 2016-11-17 US claimed
US-8759200-B2 Methods and apparatus for selective epitaxy of Si-containing materials and substitutionally doped crystalline Si-containing material MATHESON TRI-GAS, INC. (US) 2014-06-24 US claimed
WO-2014070600-A1 METHODS FOR SELECTIVE AND CONFORMAL EPITAXY OF HIGHLY DOPED SI-CONTAINING MATERIALS FOR THREE DIMENSIONAL STRUCTURES MATHESON TRI-GAS, INC. (US) 2014-05-08 WO claimed
US-20140120678-A1 Methods for Selective and Conformal Epitaxy of Highly Doped Si-containing Materials for Three Dimensional Structures MATHESON TRI-GAS (US) 2014-05-01 US claimed
EP-2588650-A1 SELECTIVE EPITAXY OF SI-CONTAINING MATERIALS AND SUBSTITUTIONALLY DOPED CRYSTALLINE SI-CONTAINING MATERIALS Matheson Tri-Gas, Inc. (US) 2013-05-08 EP claimed
US-8367548-B2 Stable silicide films and methods for making the same ASM AMERICA, INC. (US) 2013-02-05 US claimed
US-20120003819-A1 Methods and apparatus for selective epitaxy of si-containing materials and substitutionally doped crystalline si-containing material INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-01-05 US claimed
WO-2012002994-A1 SELECTIVE EPITAXY OF SI-CONTAINING MATERIALS AND SUBSTITUTIONALLY DOPED CRYSTALLINE SI-CONTAINING MATERIALS MATHESON TRI-GAS, INC. (US) 2012-01-05 WO claimed
US-20050064684-A1 Process for deposition of semiconductor films ASM IP HOLDING B.V. (NL) 2005-03-24 US claimed
US-6821825-B2 VAPOR DEPOSITION USING SILANE COMPOUND; UNIFORM THICKNESS ASM AMERICA, INC. 2004-11-23 US claimed
EP-1421607-A2 IMPROVED PROCESS FOR DEPOSITION OF SEMICONDUCTOR FILMS ASM America, Inc. (US) 2004-05-26 EP claimed
WO-2002080244-A9 IMPROVED PROCESS FOR DEPOSITION OF SEMICONDUCTOR FILMS ASM INC (US) 2004-04-22 WO claimed
EP-1374290-A2 IMPROVED PROCESS FOR DEPOSITION OF SEMICONDUCTOR FILMS ASM America, Inc. (US) 2004-01-02 EP claimed
US-20030082300-A1 Improved Process for Deposition of Semiconductor Films ASM IP HOLDING B.V. (NL) 2003-05-01 US claimed
US-20030022528-A1 Improved Process for Deposition of Semiconductor Films ASM IP HOLDING B.V. (NL) 2003-01-30 US claimed
WO-2002080244-A2 IMPROVED PROCESS FOR DEPOSITION OF SEMICONDUCTOR FILMS ASM AMERICA, INC. (US) 2002-10-10 WO claimed
WO-2002065516-A2 IMPROVED PROCESS FOR DEPOSITION OF SEMICONDUCTOR FILMS ASM AMERICA, INC. (US) 2002-08-22 WO claimed
US-5399740-A Tris(silyl)methanes and their preparation methods KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY (KR) 1995-03-21 US claimed