SCHEMBL2344818

SCHEMBL2344818

C=CC(Br)C1(C(C)CC)C(=O)N(CC2CO2)C(=O)N(CC2CO2)C1=O

nearest known ligand 0.34

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
TP53 P04637 1/20 0.32
HBB P68871 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2344619 0.88 TP53 (0.34) TP53HBBSMN1; SMN2
SCHEMBL1715585 0.77 TP53 (0.31) TP53HBBSMN1; SMN2
SCHEMBL1714710 0.74 TP53 (0.35) TP53HBBSMN1; SMN2
SCHEMBL2778588 0.71 CYP3A4 (0.42) TP53HBBSMN1; SMN2
SCHEMBL1715055 0.69 TP53 (0.33) TP53HBBSMN1; SMN2
SCHEMBL1715245 0.69 TP53 (0.33) TP53HBBSMN1; SMN2
SCHEMBL1715111 0.69 TP53 (0.44) TP53HBBSMN1; SMN2
SCHEMBL22644804 0.69 TP53 (0.44) TP53HBBSMN1; SMN2
SCHEMBL11089324 0.68 TP53 (0.47) TP53HBBSMN1; SMN2
SCHEMBL12268497 0.68 TP53 (0.47) TP53HBBSMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230103242-A1 METHOD FOR PRODUCING POLYMER NISSAN CHEMICAL CORPORATION (JP) 2023-03-30 US disclosed
WO-2021111977-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM 日産化学株式会社 2021-06-10 WO disclosed
WO-2021111976-A1 METHOD FOR PRODUCING POLYMER 日産化学株式会社 2021-06-10 WO disclosed
EP-2085823-B1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING QUADRUPLE-LAYER LAMINATE NISSAN CHEMICAL IND LTD (JP) 2013-01-16 EP disclosed
EP-1813987-B1 SULFONIC-ESTER-CONTAINING COMPOSITION FOR FORMATION OF ANTIREFLECTION FILM FOR LITHOGRAPHY NISSAN CHEMICAL IND LTD (JP) 2011-08-24 EP disclosed
US-7842620-B2 Method for manufacturing semiconductor device using quadruple-layer laminate NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-11-30 US disclosed
US-20100022089-A1 Method for manufacturing semiconductor device using quadruple-layer laminate NISSIAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-01-28 US disclosed
US-7595144-B2 Sulfonate-containing anti-reflective coating forming composition for lithography NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2009-09-29 US disclosed
EP-2085823-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING QUADRUPLE-LAYER LAMINATE Nissan Chemical Industries, Ltd. (JP) 2009-08-05 EP disclosed
US-20080003524-A1 Sulfonate-Containing Anti-Reflective Coating Forming Composition for Lithography NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2008-01-03 US disclosed
EP-1813987-A1 SULFONIC-ESTER-CONTAINING COMPOSITION FOR FORMATION OF ANTIREFLECTION FILM FOR LITHOGRAPHY Nissan Chemical Industries, Ltd. (JP) 2007-08-01 EP disclosed