SCHEMBL1714710

SCHEMBL1714710

C=CCC1(C(C)C)C(=O)N(CC2CO2)C(=O)N(CC2CO2)C1=O

nearest known ligand 0.40

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
TP53 P04637 1/20 0.35
HBB P68871 1/20 0.35
SMN1; SMN2 Q16637 1/20 0.35
MMP9 P14780 1/20 0.32
OPRM1 P35372 1/20 0.30
OPRK1 P41145 1/20 0.30
OPRL1 P41146 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1715055 0.81 TP53 (0.33) TP53HBBSMN1; SMN2
SCHEMBL12268625 0.81 TP53 (0.40) TP53HBBSMN1; SMN2OPRM1OPRK1
SCHEMBL2344619 0.80 TP53 (0.34) TP53HBBSMN1; SMN2
SCHEMBL1715245 0.78 TP53 (0.33) TP53HBBSMN1; SMN2
SCHEMBL12268505 0.76 MMP9 (0.33) MMP9
SCHEMBL170841 0.74 TP53 (0.37) TP53HBBSMN1; SMN2OPRM1OPRK1
SCHEMBL2344818 0.74 TP53 (0.32) TP53HBBSMN1; SMN2
SCHEMBL2778588 0.72 CYP3A4 (0.42) TP53HBBSMN1; SMN2MMP9OPRM1
SCHEMBL11089324 0.72 TP53 (0.47) TP53HBBSMN1; SMN2OPRM1OPRK1
SCHEMBL22483108 0.71 SMN1; SMN2 (0.42) TP53HBBSMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 29 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-122095316-A Composition for forming resist underlayer film 2026-05-26 CN disclosed
WO-2025095106-A1 RESIST UNDERLAYER FILM FORMATION COMPOSITION 日産化学株式会社 2025-05-08 WO disclosed
CN-114746468-B Method for producing polymer 日产化学株式会社 2024-09-13 CN disclosed
US-20230103242-A1 METHOD FOR PRODUCING POLYMER NISSAN CHEMICAL CORPORATION (JP) 2023-03-30 US disclosed
US-20230029997-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM NISSAN CHEMICAL CORPORATION (JP) 2023-02-02 US disclosed
CN-114761876-A Composition for forming resist underlayer film 日产化学株式会社 2022-07-15 CN disclosed
CN-114746468-A Method for producing polymer 日产化学株式会社 2022-07-12 CN disclosed
WO-2021111976-A1 METHOD FOR PRODUCING POLYMER 日産化学株式会社 2021-06-10 WO disclosed
WO-2021111977-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM 日産化学株式会社 2021-06-10 WO disclosed
US-9240327-B2 Resist underlayer film-forming composition for EUV lithography containing condensation polymer NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-01-19 US disclosed
US-7632626-B2 a polyester copolymer of fumaric acid and a diglycidyl ether with backbone of groups selected from substituted or unsubstituted alkylene, phenylene, napthylene, anthrylene, phthalic acid, triazinetrione etc. 1,3,4,6-tetrakis(methtoxymethyl)glycoluril crosslinker, a sulfonium or iodonium acid generator NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2009-12-15 US disclosed
US-7595144-B2 Sulfonate-containing anti-reflective coating forming composition for lithography NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2009-09-29 US disclosed
EP-2085823-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING QUADRUPLE-LAYER LAMINATE Nissan Chemical Industries, Ltd. (JP) 2009-08-05 EP disclosed
US-20080268379-A1 a polyester copolymer of fumaric acid and a diglycidyl ether with backbone of groups selected from substituted or unsubstituted alkylene, phenylene, napthylene, anthrylene, phthalic acid, triazinetrione etc. 1,3,4,6-tetrakis(methtoxymethyl)glycoluril crosslinker, a sulfonium or iodonium acid generator NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2008-10-30 US disclosed
CN-101160549-A Composition comprising polymer having ethylene-dicarbonyl structure for use in forming anti-reflective coating for lithography NISSAN CHEMICAL IND LTD (JP) 2008-04-09 CN disclosed
US-20080038678-A1 Condensation Type Polymer-Containing Anti-Reflective Coating For Semiconductor NISSAN CHEMICAL INDUSTRIES LTD. (JP) 2008-02-14 US disclosed
EP-1876495-A1 COMPOSITION COMPRISING POLYMER HAVING ETHYLENE-DICARBONYL STRUCTURE FOR USE IN FORMING ANTI-REFLECTIVE COATING FOR LITHOGRAPHY Nissan Chemical Industries, Ltd. (JP) 2008-01-09 EP disclosed
US-20080003524-A1 Sulfonate-Containing Anti-Reflective Coating Forming Composition for Lithography NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2008-01-03 US disclosed
EP-1813987-A1 SULFONIC-ESTER-CONTAINING COMPOSITION FOR FORMATION OF ANTIREFLECTION FILM FOR LITHOGRAPHY Nissan Chemical Industries, Ltd. (JP) 2007-08-01 EP disclosed
EP-1757986-A1 ANTIREFLECTION FILM FOR SEMICONDUCTOR CONTAINING CONDENSATION TYPE POLYMER Nissan Chemical Industries, Ltd. (JP) 2007-02-28 EP disclosed