SCHEMBL2361865

SCHEMBL2361865

O=C1C=C(O)C=CC1CC=CO

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2361165 0.76
SCHEMBL19295411 0.70 FAAH (0.31)
SCHEMBL5731827 0.67
SCHEMBL2697903 0.63
SCHEMBL16418366 0.62
SCHEMBL19295409 0.61
SCHEMBL17372870 0.59
SCHEMBL1934464 0.59
SCHEMBL2361120 0.56
SCHEMBL10706676 0.51

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20110207326-A1 SLURRY FOR POLISHING AND PLANARIZATION METHOD OF INSULATING LAYER USING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-08-25 US claimed
CN-106867411-B Slurry composition for chemical mechanical polishing, method for producing the same, polishing method, method for manufacturing semiconductor device, and polishing apparatus 三星电子株式会社 2021-04-06 CN disclosed
US-10829690-B2 Slurry composition for chemical mechanical polishing, method of preparing the same, and method of fabricating semiconductor device by using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2020-11-10 US disclosed
CN-110872472-A Slurry composition, method of preparing the same, and method of manufacturing semiconductor device using the same 三星电子株式会社 2020-03-10 CN disclosed
US-20200071613-A1 SLURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING, METHOD OF PREPARING THE SAME, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE BY USING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2020-03-05 US disclosed
US-20170107404-A1 SLURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING, METHOD OF PREPARING THE SAME, AND POLISHING METHOD USING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2017-04-20 US disclosed
US-8546261-B2 Slurry for polishing and planarization method of insulating layer using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2013-10-01 US disclosed
US-20110207326-A1 SLURRY FOR POLISHING AND PLANARIZATION METHOD OF INSULATING LAYER USING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-08-25 US disclosed