SCHEMBL2362328

SCHEMBL2362328

O=C(O)C(F)(F)C(F)(F)C(F)(F)C(=O)O.[InH3]

nearest known ligand 0.63

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
THRB P10828 1/20 0.63
ACLY P53396 2/20 0.42
ALDH1A1 P00352 3/20 0.36
L3MBTL1 Q9Y468 1/20 0.36
TSHR P16473 2/20 0.33
TP53 P04637 1/20 0.33
VCAM1 P19320 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL430675 0.96 THRB (0.67) THRBACLYALDH1A1L3MBTL1TSHR
SCHEMBL10663868 0.93 THRB (0.63) THRBACLYALDH1A1L3MBTL1TSHR
SCHEMBL2362887 0.93 THRB (0.63) THRBACLYALDH1A1L3MBTL1TSHR
SCHEMBL2517284 0.93 THRB (0.63) THRBACLYALDH1A1L3MBTL1TSHR
SCHEMBL11537908 0.93 THRB (0.63) THRBACLYALDH1A1L3MBTL1TSHR
SCHEMBL11607819 0.93 THRB (0.63) THRBACLYALDH1A1L3MBTL1TSHR
Hydrochloric Acid SCHEMBL2784370 0.93 THRB (0.63) THRBACLYALDH1A1L3MBTL1TSHR
SCHEMBL5275790 0.93 THRB (0.63) THRBACLYALDH1A1L3MBTL1TSHR
SCHEMBL8031206 0.93 THRB (0.63) THRBACLYALDH1A1L3MBTL1TSHR
SCHEMBL10456251 0.93 THRB (0.63) THRBACLYALDH1A1L3MBTL1TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8809678-B2 Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells AERIS CAPITAL SUSTAINABLE IP LTD. (KY) 2014-08-19 US disclosed
US-20120211074-A1 Coated Nanoparticles and Quantum Dots for Solution-Based Fabrication of Photovoltaic Cells AERIS CAPITAL SUSTAINABLE IP LTD. (KY) 2012-08-23 US disclosed
US-8193442-B2 Core particles containing one or more elements from group IB and/or IIIA and/or VIA are coated with one or more layers of metal from group IB, IIIA or an element from group VIA in a controlled fashion; coated nanoparticles have a desired stoichiometric ratio of elements; ink, paste or paint NANOSOLAR, INC. (US) 2012-06-05 US disclosed
US-20110189815-A1 FORMATION OF CIGS ABSORBER LAYER MATERIALS USING ATOMIC LAYER DEPOSITION AND HIGH THROUGHPUT SURFACE TREATMENT ON COILED FLEXIBLE SUBSTRATES NANOSOLAR, INC. 2011-08-04 US disclosed
US-7858151-B2 Elements of groups IB, IIIA, VIB formed by placing a substrate in a treatment chamber, performing atomic layer deposition of a group IB element and/or group IIIA elements from separate sources onto a substrate to form a film, group VIA element is then incorporated into the film; solar cell; lamination NANOSOLAR, INC. (US) 2010-12-28 US disclosed
US-20090304924-A1 APPARATUS AND METHOD FOR LARGE AREA MULTI-LAYER ATOMIC LAYER CHEMICAL VAPOR PROCESSING OF THIN FILMS GADGIL PRASAD 2009-12-10 US disclosed
CN-101589171-A Apparatus and method for large area multi-layer atomic layer chemical vapor processing of thin films Prasad Gadgil (US) 2009-11-25 CN disclosed
CN-100559513-C Nesa coating KONICA MINOLTA HOLDINGS INC (JP) 2009-11-11 CN disclosed
US-20090025640-A1 FORMATION OF CIGS ABSORBER LAYER MATERIALS USING ATOMIC LAYER DEPOSITION AND HIGH THROUGHPUT SURFACE TREATMENT AERIS CAPITAL SUSTAINABLE IP LTD. (KY) 2009-01-29 US disclosed
US-20080305269-A1 Formation of CIGS absorber layer materials using atomic layer deposition and high throughput surface treatment SAGER BRIAN M 2008-12-11 US disclosed
US-20080149176-A1 Core particles containing one or more elements from group IB and/or IIIA and/or VIA are coated with one or more layers of metal from group IB, IIIA or an element from group VIA in a controlled fashion; coated nanoparticles have a desired stoichiometric ratio of elements; ink, paste or paint NANOSOLAR INC. (US) 2008-06-26 US disclosed
US-7306823-B2 Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells NANOSOLAR, INC. (US) 2007-12-11 US disclosed
CN-101023499-A Transparent conductive film KONICA MINOLTA HOLDINGS INC (JP) 2007-08-22 CN disclosed
WO-2006135377-A2 COATED NANOPARTICLES AND QUANTUM DOTS FOR SOLUTION-BASED FABRICATION OF PHOTOVOLTAIC CELLS NANOSOLAR, INC. (US) 2006-12-21 WO disclosed
US-20060062902-A1 Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells NANOSOLAR, INC. (US) 2006-03-23 US disclosed
WO-2005081789-A2 Formation of CIGS Absorber Layer by Atomic Layer Deposition NANOSOLAR, INC. (US) 2005-09-09 WO disclosed
US-20050186342-A1 Elements of groups IB, IIIA, VIB formed by placing a substrate in a treatment chamber, performing atomic layer deposition of a group IB element and/or group IIIA elements from separate sources onto a substrate to form a film, group VIA element is then incorporated into the film; solar cell; lamination NANOSOLAR, INC. (US) 2005-08-25 US disclosed