⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10476925 | 0.87 | — | — | |
| SCHEMBL23673298 | 0.87 | — | — | |
| SCHEMBL2139279 | 0.87 | — | — | |
| SCHEMBL23673292 | 0.87 | — | — | |
| SCHEMBL6205967 | 0.75 | — | — | |
| Hydrogen Sulfide SCHEMBL22028703 | 0.75 | — | — | |
| SCHEMBL8945953 | 0.71 | — | — | |
| SCHEMBL428692 | 0.71 | — | — | |
| SCHEMBL427351 | 0.71 | — | — | |
| SCHEMBL296185 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250160042-A1 | HIGH PERFORMANCE LONG-LIFETIME CHARGE-SEPARATION PHOTODETECTORS | THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ARKANSAS | 2025-05-15 | — | — | US | claimed |
| US-12288809-B2 | Semiconductor device with doped structure | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-04-29 | — | — | US | claimed |
| CN-119469424-A | Uncooled infrared sensor structure and manufacturing method thereof | 广州诺尔光电科技有限公司 | 2025-02-18 | — | — | CN | claimed |
| US-20240234506-A1 | SEMICONDUCTOR DEVICE WITH DOPED STRUCTURE | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-07-11 | — | — | US | claimed |
| US-20210399147-A1 | HIGH PERFORMANCE LONG-LIFETIME CHARGE-SEPARATION PHOTODETECTORS | ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY | 2021-12-23 | — | — | US | claimed |
| US-20210234000-A1 | SEMICONDUCTOR DEVICE WITH DOPED STRUCTURE | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-07-29 | — | — | US | claimed |
| US-20250160042-A1 | HIGH PERFORMANCE LONG-LIFETIME CHARGE-SEPARATION PHOTODETECTORS | THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ARKANSAS | 2025-05-15 | — | — | US | disclosed |
| US-12288809-B2 | Semiconductor device with doped structure | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-04-29 | — | — | US | disclosed |
| CN-119469424-A | Uncooled infrared sensor structure and manufacturing method thereof | 广州诺尔光电科技有限公司 | 2025-02-18 | — | — | CN | disclosed |
| US-20240234506-A1 | SEMICONDUCTOR DEVICE WITH DOPED STRUCTURE | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-07-11 | — | — | US | disclosed |
| US-11990512-B2 | Semiconductor device with doped structure | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-05-21 | — | — | US | disclosed |
| US-20220165847-A1 | SEMICONDUCTOR DEVICE WITH DOPED STRUCTURE | TAIWAN SEMICONDUCTOR MANUFACTURING CO.,LTD. (TW) | 2022-05-26 | — | — | US | disclosed |
| US-11251268-B2 | Semiconductor device with doped structure | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-02-15 | — | — | US | disclosed |
| US-20210399147-A1 | HIGH PERFORMANCE LONG-LIFETIME CHARGE-SEPARATION PHOTODETECTORS | ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY | 2021-12-23 | — | — | US | disclosed |
| CN-113257915-A | Semiconductor device with a plurality of semiconductor chips | 台湾积体电路制造股份有限公司 | 2021-08-13 | — | — | CN | disclosed |
| US-20210234000-A1 | SEMICONDUCTOR DEVICE WITH DOPED STRUCTURE | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-07-29 | — | — | US | disclosed |