⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL430914 | 1.00 | — | — | |
| SCHEMBL23709 | 1.00 | — | — | |
| SCHEMBL352680 | 1.00 | — | — | |
| SCHEMBL28669843 | 1.00 | — | — | |
| SCHEMBL427351 | 1.00 | — | — | |
| SCHEMBL17707724 | 1.00 | — | — | |
| SCHEMBL28793381 | 1.00 | — | — | |
| SCHEMBL3760803 | 1.00 | — | — | |
| SCHEMBL23673298 | 0.82 | — | — | |
| SCHEMBL21380724 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 132 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9070771-B2 | Bulk finFET with controlled fin height and high-k liner | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2015-06-30 | — | — | US | claimed |
| US-20140353721-A1 | BULK FINFET WITH CONTROLLED FIN HEIGHT AND HIGH-K LINER | GLOBALFOUNDRIES U.S. INC. | 2014-12-04 | — | — | US | claimed |
| US-20140061820-A1 | BULK FINFET WITH CONTROLLED FIN HEIGHT AND HIGH-K LINER | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2014-03-06 | — | — | US | claimed |
| US-20260040607-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORP (TW) | 2026-02-05 | — | — | US | disclosed |
| US-12432964-B2 | Co-integrated gallium nitride (GaN) and complementary metal oxide semiconductor (CMOS) integrated circuit technology | INTEL CORPORATION (US) | 2025-09-30 | — | — | US | disclosed |
| US-20250185403-A1 | IMAGE SENSOR HAVING STRESS RELEASING STRUCTURE | TAIWAN SEMICONDUCTOR MANFACTURING COMPANY, LTD. (TW) | 2025-06-05 | — | — | US | disclosed |
| US-12255161-B2 | Semiconductor device with composite conductive features and method for fabricating the same | NANYA TECHNOLOGY CORPORATION (TW) | 2025-03-18 | — | — | US | disclosed |
| US-12224297-B2 | Method of forming an image sensor having stress releasing structure | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-02-11 | — | — | US | disclosed |
| US-12218087-B2 | Semiconductor device with composite conductive features and method for fabricating the same | NANYA TECHNOLOGY CORPORATION (TW) | 2025-02-04 | — | — | US | disclosed |
| CN-113496974-B | Semiconductor element and method for manufacturing the same | 南亚科技股份有限公司 | 2024-10-18 | — | — | CN | disclosed |
| CN-113161352-B | Semiconductor element and method for manufacturing the same | 南亚科技股份有限公司 | 2024-10-18 | — | — | CN | disclosed |
| US-7915694-B2 | Gate electrode having a capping layer | INTEL CORPORATION (US) | 2011-03-29 | — | — | US | disclosed |
| US-20090121297-A1 | GATE ELECTRODE HAVING A CAPPING LAYER | DEWEY GILBERT | 2009-05-14 | — | — | US | disclosed |
| US-7332386-B2 | Methods of fabricating fin field transistors | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2008-02-19 | — | — | US | disclosed |
| US-20070297967-A1 | Hydride Compounds With Silicon And Germanium Core Atoms And Method Of Synthesizing Same | ARIZONA BOARD OF REGENTS (US) | 2007-12-27 | — | — | US | disclosed |
| US-20070108404-A1 | METHOD OF SELECTIVELY DEPOSITING A THIN FILM MATERIAL AT A SEMICONDUCTOR INTERFACE | APPLIED MATERIALS, INC. | 2007-05-17 | — | — | US | disclosed |
| WO-2006031240-A1 | HYDRIDE COMPOUNDS WITH SILICON AND GERMANIUM CORE ATOMS AND METHOD OF SYNTHESIZING SAME | ARIZONA BOARD OF REGENTS (US) | 2006-03-23 | — | — | WO | disclosed |
| US-20050269629-A1 | Fin field effect transistors and methods of fabricating the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2005-12-08 | — | — | US | disclosed |
| US-6680504-B2 | Method for constructing a metal oxide semiconductor field effect transistor | TEXAS INSTRUMENTS INCORPORATED | 2004-01-20 | — | — | US | disclosed |
| US-20020081792-A1 | Method for constructing a metal oxide semiconductor field effect transistor | TEXAS INSTRUMENTS INCORPORATED | 2002-06-27 | — | — | US | disclosed |