SCHEMBL2370409

SCHEMBL2370409

CCCCn1ccnc1.CCCCn1ccnc1.CCCCn1ccnc1.CCCCn1ccnc1.[Cu]

nearest known ligand 0.81

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
TBXAS1 P24557 7/20 0.81
QPCT Q16769 3/20 0.56
PRKCI P41743 1/20 0.55
KDM4E B2RXH2 1/20 0.51
LMNA P02545 1/20 0.51

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16694285 1.00 TBXAS1 (0.81) TBXAS1QPCTPRKCIKDM4ELMNA
SCHEMBL81565 0.98
SCHEMBL16992940 0.96 TBXAS1 (0.81) TBXAS1QPCTPRKCIKDM4ELMNA
SCHEMBL31125701 0.96 TBXAS1 (0.81) TBXAS1QPCTPRKCIKDM4ELMNA
SCHEMBL28289086 0.96 TBXAS1 (0.81) TBXAS1QPCTPRKCIKDM4ELMNA
Ammonia Solution, Strong SCHEMBL12802505 0.96 TBXAS1 (0.81) TBXAS1QPCTPRKCIKDM4ELMNA
Bromide SCHEMBL1285760 0.96 TBXAS1 (0.81) TBXAS1QPCTPRKCIKDM4ELMNA
Hydrochloric Acid SCHEMBL382921 0.96 TBXAS1 (0.81) TBXAS1QPCTPRKCIKDM4ELMNA
Fluoride SCHEMBL4951209 0.96 TBXAS1 (0.81) TBXAS1QPCTPRKCIKDM4ELMNA
Butane SCHEMBL28263527 0.96 TBXAS1 (0.81) TBXAS1QPCTPRKCIKDM4ELMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2011109878-A1 LIQUID METAL SALTS KATHOLIEKE UNIVERSITEIT LEUVEN (BE) 2011-09-15 WO claimed
US-9828677-B2 Article and process for selective etching THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE (US) 2017-11-28 US disclosed
US-9809882-B2 Article and process for selective deposition THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE (US) 2017-11-07 US disclosed
US-20170098548-A9 ARTICLE AND PROCESS FOR SELECTIVE ETCHING GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE, THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY 2017-04-06 US disclosed
US-9580809-B2 Article with gradient property and processes for selective etching THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE (US) 2017-02-28 US disclosed
US-9506149-B2 Liquid deposition composition and process for forming metal therefrom THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE (US) 2016-11-29 US disclosed
US-20150191825-A1 LIQUID DEPOSITION COMPOSITION AND PROCESS FOR FORMING METAL THEREFROM GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE, THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY 2015-07-09 US disclosed
US-20150147885-A1 ARTICLE AND PROCESS FOR SELECTIVE ETCHING NAT INST OF STANDARDS & TECH (US) 2015-05-28 US disclosed
US-20150126031-A1 ARTICLE AND PROCESS FOR SELECTIVE DEPOSITION GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE, THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY 2015-05-07 US disclosed
US-20150123249-A1 ARTICLE WITH GRADIENT PROPERTY AND PROCESSES FOR SELECTIVE ETCHING GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE, THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY 2015-05-07 US disclosed
WO-2011109878-A1 LIQUID METAL SALTS KATHOLIEKE UNIVERSITEIT LEUVEN (BE) 2011-09-15 WO disclosed