⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Silicate SCHEMBL4565145 | 0.94 | — | — | |
| Silicate SCHEMBL33511 | 0.94 | — | — | |
| Silicate SCHEMBL1882854 | 0.94 | — | — | |
| Silicate SCHEMBL108161 | 0.94 | — | — | |
| Silicate SCHEMBL2065649 | 0.94 | — | — | |
| Silicate SCHEMBL2471027 | 0.88 | — | — | |
| Silicate SCHEMBL20473414 | 0.88 | — | — | |
| Silicate SCHEMBL16796524 | 0.88 | — | — | |
| Silicate SCHEMBL22273598 | 0.88 | — | — | |
| Silicate SCHEMBL15416431 | 0.88 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 7359 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12610794-B2 | Semiconductor device and method having deep trench isolation | SK KEYFOUNDRY INC. (KR) | 2026-04-21 | — | — | US | claimed |
| US-12588351-B2 | Electronic device and method for manufacturing electronic device | SONY SEMICONDUCTOR SOLUTIONS CORPORATION (JP) | 2026-03-24 | — | — | US | claimed |
| US-12170310-B2 | Integrated circuits including composite dielectric layer | TEXAS INSTRUMENTS INCORPORATED (US) | 2024-12-17 | — | — | US | claimed |
| US-20240112948-A1 | SEMICONDUCTOR DEVICE AND METHOD HAVING DEEP TRENCH ISOLATION | KEY FOUNDRY CO., LTD. (KR) | 2024-04-04 | — | — | US | claimed |
| US-20240032316-A1 | ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | SONY SEMICONDUCTOR SOLUTIONS CORPORATION (JP) | 2024-01-25 | — | — | US | claimed |
| EP-3485047-B1 | COPPER-NICKEL-TIN ALLOY, METHOD FOR THE PRODUCTION AND USE THEREOF | WIELAND WERKE AG (DE) | 2022-08-17 | — | — | EP | claimed |
| EP-3485051-B1 | COPPER-NICKEL-TIN ALLOY, METHOD FOR THE PRODUCTION AND USE THEREOF | WIELAND WERKE AG (DE) | 2022-07-13 | — | — | EP | claimed |
| EP-3485049-B1 | COPPER-NICKEL-TIN ALLOY, METHOD FOR THE PRODUCTION AND USE THEREOF | WIELAND WERKE AG (DE) | 2022-07-06 | — | — | EP | claimed |
| EP-3423605-B1 | COPPER ALLOY CONTAINING TIN, METHOD FOR PRODUCING SAME, AND USE OF SAME | WIELAND WERKE AG (DE) | 2021-06-30 | — | — | EP | claimed |
| US-11041233-B2 | Copper-nickel-tin alloy, method for the production and use thereof | WIELAND-WERKE AG (DE) | 2021-06-22 | — | — | US | claimed |
| US-5240873-A | Method of making charge transfer device | INTELLECTUAL VENTURES II LLC | 1993-08-31 | — | — | US | claimed |
| US-5210054-A | Method for forming a contact plug | SHARP KABUSHIKI KAISHA (JP) | 1993-05-11 | — | — | US | claimed |
| EP-0523984-A1 | Solid state image pick-up element | SHARP KABUSHIKI KAISHA (JP) | 1993-01-20 | — | — | EP | claimed |
| US-5166101-A | Method for forming a boron phosphorus silicate glass composite layer on a semiconductor wafer | APPLIED MATERIALS, INC. (US) | 1992-11-24 | — | — | US | claimed |
| EP-0421203-A1 | An integrated circuit structure with a boron phosphorus silicate glass composite layer on semiconductor wafer and improved method for forming same | APPLIED MATERIALS, INC. (US) | 1991-04-10 | — | — | EP | claimed |
| US-4984056-A | Semiconductor integrated circuit device | MITSUBISHI DENKI KABUSHIKI KAISHA (JP) | 1991-01-08 | — | — | US | claimed |
| US-4980311-A | Method of fabricating a semiconductor device | SEIKO EPSON CORPORATION (JP) | 1990-12-25 | — | — | US | claimed |
| US-4774561-A | Semiconductor device | MITSUBISHI DENKI KABUSHIKI KAISHA (JP) | 1988-09-27 | — | — | US | claimed |
| US-4603472-A | Method of making MOS FETs using silicate glass layer as gate edge masking for ion implantation | SIEMENS AKTIENGESELLSCHAFT (DE) | 1986-08-05 | — | — | US | claimed |
| US-4410375-A | Method for fabricating a semiconductor device | TOKYO SHIBAURA DENKI KABUSHIKI KAISHA (JP) | 1983-10-18 | — | — | US | claimed |