Fluoride

Fluoride

SCHEMBL2393843

F.[HH]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Fluoride SCHEMBL27628561 1.00
Fluoride SCHEMBL7632863 0.82
Fluoride SCHEMBL8166062 0.82
Fluoride SCHEMBL9247546 0.82
Fluoride SCHEMBL8778147 0.82
Fluoride SCHEMBL23065011 0.82
Fluoride SCHEMBL4126350 0.82
Fluoride SCHEMBL11744617 0.82
Fluoride SCHEMBL22158006 0.82
Fluoride SCHEMBL7637704 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20110229399-A1 Method for the production of polycrystalline silicon SUNLIT S.R.L. 2011-09-22 US claimed
EP-2362852-A2 METHOD FOR THE PRODUCTION OF POLYCRYSTALLINE SILICON Sunlit S.R.L. (IT) 2011-09-07 EP claimed
WO-2010046751-A2 METHOD FOR THE PRODUCTION OF POLYCRYSTALLINE SILICON SUNLIT S.R.L. (IT) 2010-04-29 WO claimed
US-6743728-B2 Method for forming shallow trench isolation NANYA TECHNOLOGY CORPORATION (TW) 2004-06-01 US claimed
US-20040058549-A1 Method for forming shallow trench isolation NANYA TECHNOLOGY CORPORATION (TW) 2004-03-25 US claimed
JP-1214871-A None JP disclosed
WO-2023226052-A1 COATING SLURRY, SEPARATOR, SEPARATOR PREPARATION METHOD, AND BATTERY 深圳市星源材质科技股份有限公司 2023-11-30 WO disclosed
CN-109694074-A A kind of method that electrochemical process prepares MXenes and its derivates nanometer piece 青岛大学 2019-04-30 CN disclosed
CN-107004912-A Electrolyte and metal hydride battery 巴斯夫公司 2017-08-01 CN disclosed
CN-106010826-A Selectively Removing Titanium Nitride Hard Mask and Etch Residue Removal 气体产品与化学公司 2016-10-12 CN disclosed
US-20100221171-A1 METHOD FOR PRODUCING POLYCRYSTALLINE SILICON OBSCHESTVO S OGRANICHENNOY OTVETSTVENNOSTYU "SOLAR SI\ (RU) 2010-09-02 US disclosed
EP-2172423-A2 METHOD FOR PRODUCING POLYCRYSTALLINE SILICON FROM A HYDROSILICOFLUORIC ACID SOLUTION AND A PLANT FOR PRODUCING SILICON TETRAFLUORIDE AND POLYCRYSTALLINE SILICON Zakrytoe Aktsionernoe Obschestvo "solar Si" (RU) 2010-04-07 EP disclosed
CN-1245329-C Catalyst for making hydrogen of hydrogenous inorganic compound aqueous solution and hydrogen making process DALIAN CHEMICAL PHYSICS INST (CN) 2006-03-15 CN disclosed
CN-1565958-A Catalyst for making hydrogen of hydrogenous inorganic compound aqueous solution and hydrogen making process DALIAN CHEMICAL PHYSICS INST (CN) 2005-01-19 CN disclosed
US-6743728-B2 Method for forming shallow trench isolation NANYA TECHNOLOGY CORPORATION (TW) 2004-06-01 US disclosed
US-20040058549-A1 Method for forming shallow trench isolation NANYA TECHNOLOGY CORPORATION (TW) 2004-03-25 US disclosed
JP-2003188253-A METHOD FOR REMOVING INSULATING FILM FROM VIA BOTTOM, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE ULVAC JAPAN LTD 2003-07-04 JP disclosed
EP-0688309-A1 CONTINUOUS PROCESS FOR PURIFYING PERFLUOROCHEMICAL COMPOSITIONS MINNESOTA MINING & MFG (US) 1995-12-27 EP disclosed
WO-1994022794-A1 CONTINUOUS PROCESS FOR PURIFYING PERFLUOROCHEMICAL COMPOSITIONS MINNESOTA MINING AND MANUFACTURING COMPANY (US) 1994-10-13 WO disclosed
JP-H01214871-A ELECTROPHOTOGRAPHIC SENSITIVE BODY FUJI ELECTRIC CO LTD 1989-08-29 JP disclosed