⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL696272 | 0.79 | — | — | |
| SCHEMBL3806113 | 0.77 | — | — | |
| SCHEMBL13011463 | 0.75 | — | — | |
| SCHEMBL1171176 | 0.73 | — | — | |
| SCHEMBL13011274 | 0.73 | — | — | |
| SCHEMBL1183833 | 0.73 | — | — | |
| SCHEMBL5449467 | 0.72 | ALDH1A1 (0.30) | — | |
| SCHEMBL1464424 | 0.71 | — | — | |
| SCHEMBL6117938 | 0.70 | — | — | |
| SCHEMBL954208 | 0.69 | ALDH1A1 (0.31) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8968979-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-03 | — | — | US | disclosed |
| US-8795942-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-08-05 | — | — | US | disclosed |
| US-8017302-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-09-13 | — | — | US | disclosed |
| US-7727704-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-01 | — | — | US | disclosed |
| US-20100129738-A1 | POSITIVE RESIST COMPOSITION AND PATTERING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-05-27 | — | — | US | disclosed |
| US-7691561-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-04-06 | — | — | US | disclosed |
| US-7638260-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-12-29 | — | — | US | disclosed |
| US-7618764-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-11-17 | — | — | US | disclosed |
| US-20090186297-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-07-23 | — | — | US | disclosed |
| US-7541133-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-06-02 | — | — | US | disclosed |
| US-20080268370-A1 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-10-30 | — | — | US | disclosed |
| US-20080153030-A1 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-06-26 | — | — | US | disclosed |
| US-20080124652-A1 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-29 | — | — | US | disclosed |
| US-20080124653-A1 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-29 | — | — | US | disclosed |
| US-20080008959-A1 | Resin comprising monomers of cyclopentyl- or cyclohexyl (meth)acrylate; hydroxyadamantyl (meth)acrylate; 3,8-epoxy-6-oxabicyclo[3.2.1]octyl (meth)acrylat;, and/or fluoroalkyl (meth)acrylate; ArF lithography; resolution; forms a pattern with high rectangularity | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20070231741-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-10-04 | — | — | US | disclosed |