SCHEMBL2425149

SCHEMBL2425149

C[S+](C1CCCCC1=O)C1CC2CCC1C2.O=S(=O)([O-])C(F)(F)CF

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Trifluoromethanesulfonic Acid SCHEMBL63904 0.90 CA1 (0.30)
SCHEMBL7708623 0.84
SCHEMBL7708730 0.83
SCHEMBL6817556 0.83
SCHEMBL758779 0.82 CA1 (0.35)
Trifluoromethanesulfonic Acid SCHEMBL5417083 0.78
Trifluoromethanesulfonic Acid SCHEMBL4165039 0.75
SCHEMBL4179254 0.70
Trifluoromethanesulfonic Acid SCHEMBL6140981 0.70 CA1 (0.37)
SCHEMBL1624383 0.70

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2063319-B1 Metal oxide-containing film-forming composition, multilayer resist and method of formation of pattern in a substrate SHINETSU CHEMICAL CO (JP) 2011-11-02 EP disclosed
US-8026038-B2 Metal oxide-containing film-forming composition, metal oxide-containing film, metal oxide-containing film-bearing substrate, and patterning method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-09-27 US disclosed
US-20090136869-A1 METAL OXIDE-CONTAINING FILM-FORMING COMPOSITION, METAL OXIDE-CONTAINING FILM, METAL OXIDE-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-05-28 US disclosed
EP-2063319-A1 Metal oxide-containing film-forming composition, metal oxide-containing film, metal oxide-containing film-bearing substrate, and patterning method Shin-Etsu Chemical Co., Ltd. (JP) 2009-05-27 EP disclosed
US-7303855-B2 Photoresist undercoat-forming material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-04 US disclosed
US-20060019195-A1 Photoresist undercoat-forming material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-01-26 US disclosed