SCHEMBL2437281

SCHEMBL2437281

[BeH2].[GeH4]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29183911 0.82
SCHEMBL14978 0.71
SCHEMBL28661666 0.71
SCHEMBL2019682 0.71
SCHEMBL8911858 0.71
SCHEMBL28152319 0.71
SCHEMBL27466785 0.71
SCHEMBL3675 0.71
Bromide SCHEMBL23924000 0.50
SCHEMBL563873 0.50

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 35 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250072025-A1 HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME NATIONAL YANG MING CHIAO TUNG UNIVERSITY (TW) 2025-02-27 US disclosed
CN-222071951-U Super junction MOSFET and semiconductor device 杭州富芯半导体有限公司 2024-11-26 CN disclosed
CN-118198062-A Capacitor structure and manufacturing method thereof 芯恩(青岛)集成电路有限公司 2024-06-14 CN disclosed
US-20240105843-A1 TRENCH FIELD-EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING TRENCH FET HANGZHOU SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY CO., LTD. (CN) 2024-03-28 US disclosed
CN-117080219-A Semiconductor device with a semiconductor layer having a plurality of semiconductor layers 矽力杰半导体技术(杭州)有限公司 2023-11-17 CN disclosed
CN-114050207-B Device for transferring chip in huge quantity 友达光电股份有限公司 2023-11-10 CN disclosed
CN-116799068-A Semiconductor device and method for manufacturing semiconductor device 矽力杰半导体技术(杭州)有限公司 2023-09-22 CN disclosed
CN-116565011-A Semiconductor device and method for forming semiconductor device 杭州富芯半导体有限公司 2023-08-08 CN disclosed
CN-115910775-A Process for manufacturing semiconductor 杭州富芯半导体有限公司 2023-04-04 CN disclosed
CN-115602624-A Contact hole forming method and contact hole structure 杭州富芯半导体有限公司(CN) 2023-01-13 CN disclosed
CN-110610893-A Bearing structure of light emitting diode and manufacturing method thereof 启端光电股份有限公司 2019-12-24 CN disclosed
CN-209133514-U Diode hybrid termination structure 全宇昕科技股份有限公司 2019-07-19 CN disclosed
US-8394711-B2 Systems and methods for co-doping wide band gap materials THE CURATORS OF THE UNIVERSITY OF MISSOURI (US) 2013-03-12 US disclosed
CN-102534302-A Zinc-based manganese alloy with dephosphorizing and wear-resisting effect ENLI MIAO 2012-07-04 CN disclosed
US-20110237057-A1 SYSTEMS AND METHODS FOR CO-DOPING WIDE BAND GAP MATERIALS THE CURATORS OF THE UNIVERSITY OF MISSOURI (US) 2011-09-29 US disclosed
US-6011810-A Doping of germanium and silicon crystals with non-hydrogenic acceptors for far infrared lasers THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) 2000-01-04 US disclosed
EP-0561343-B1 Binder system for use in the injection molding of sinterable powders and molding compound containing the binder system KAWASAKI STEEL CO (JP) 1997-01-08 EP disclosed
US-5380179-A Glycidyl acrylate or methacrylate polymer, improved wetting, nondeforming during debinding KAWASAKI STEEL CORPORATION (JP) 1995-01-10 US disclosed
EP-0561343-A1 Binder system for use in the injection molding of sinterable powders and molding compound containing the binder system KAWASAKI STEEL CORPORATION (JP) 1993-09-22 EP disclosed
US-4525250-A Method for chemical removal of oxide layers from objects of metal LUDWIG FAHRMBACHER-LUTZ (DE) 1985-06-25 US disclosed