SCHEMBL244747

SCHEMBL244747

O=S(=O)=C=S(=O)=O

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Fluoride SCHEMBL8841037 0.94
Ethylene SCHEMBL454696 0.89
Cyclohexane SCHEMBL8898885 0.85
Benzene SCHEMBL7529646 0.85
SCHEMBL367548 0.62
SCHEMBL1651208 0.62
SCHEMBL50647 0.59
SCHEMBL6741324 0.59
Bromide SCHEMBL11127118 0.59
SCHEMBL29522 0.59

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 683 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7713677-B2 Photoresist composition, method of patterning thin film using the same, and method of manufacturing liquid crystal display panel using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2010-05-11 US claimed
EP-1238972-B1 Novel carbazole derivative and chemically amplified radiation-sensitive resin composition JSR CORP (JP) 2009-12-16 EP claimed
US-7595143-B2 Containing two binder resins produced by reacting m-cresol and p-cresol with salicylic aldehyde for first and with formaldehyde for second; heat resistance, pattern adhesion; photomasks, photoresists SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-09-29 US claimed
US-7314701-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2008-01-01 US claimed
US-20070190454-A1 PHOTORESIST COMPOSITION, METHOD OF PATTERNING THIN FILM USING THE SAME, AND METHOD OF MANUFACTURING LIQUID CRYSTAL DISPLAY PANEL USING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-08-16 US claimed
EP-1311908-B1 PHOTORESIST COMPOSITION FOR DEEP UV AND PROCESS THEREOF AZ ELECTRONIC MATERIALS USA (US) 2007-06-20 EP claimed
US-7033728-B2 Photoresist composition AZ ELECTRONIC MATERIALS USA CORP. (US) 2006-04-25 US claimed
EP-1631863-A2 PHOTORESIST COMPOSITION FOR DEEP UV AND IMAGING PROCESS THEREOF AZ Electronic Materials USA Corp. (US) 2006-03-08 EP claimed
EP-1035436-B1 Resist pattern formation method JSR CORP (JP) 2005-09-07 EP claimed
WO-2005066714-A2 PHOTORESIST COMPOSITION AZ ELECTRONIC MATERIALS USA CORP. (DE) 2005-07-21 WO claimed
US-6447980-B1 POLY(MALEIC ANHYDRIDE-CO-T-BUTYL 5-NORBORNENE-2-CARBOXYLATE-CO-2-HYDROXYETHYL 5-NORBORNENE-2-CARBOXYLATE-CO-5-NORBORNENE-2-CARBOXYLIC ACID-CO-2-METHYL ADAMANTYL METHACRYLATE-CO-MEVALONIC LACTONE) AND ACID GENERATOR CLARIANT FINANCE (BVI) LIMITED (VG) 2002-09-10 US claimed
EP-0819981-B1 Radiation sensitive resin composition JSR CORP (JP) 2002-06-05 EP claimed
WO-2002006901-A2 PHOTORESIST COMPOSITION FOR DEEP UV AND PROCESS THEREOF CLARIANT INTERNATIONAL LTD (CH) 2002-01-24 WO claimed
US-20010023050-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2001-09-20 US claimed
EP-1122605-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2001-08-08 EP claimed
US-5952150-A COMPRISING A DISULFONYLMETHANE DERIVATIVE, A RESIN PROTECTED BY AN ACID DECOMPOSABLE GROUP OR AN ALKALI-SOLUBLE RESIN AND AN ALKALI SOLUBILITY CONTROL AGENT; PHOTORESISTS JSR CORPORATION (JP) 1999-09-14 US claimed
EP-0819981-A1 Radiation sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1998-01-21 EP claimed
EP-0606756-B1 Use of disulfonyl methanes for the control of parasites LILLY CO ELI (US) 1997-07-23 EP claimed
US-5614525-A ANTHELMINTICS ELI LILLY AND COMPANY (US) 1997-03-25 US claimed
EP-0606756-A1 Use of disulfonyl methanes for the control of parasites ELI LILLY AND COMPANY (US) 1994-07-20 EP claimed