⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Selenium SCHEMBL2068422 | 0.87 | — | — | |
| Selenium SCHEMBL321739 | 0.82 | — | — | |
| Selenium SCHEMBL338070 | 0.82 | — | — | |
| Selenium SCHEMBL106172 | 0.82 | — | — | |
| SCHEMBL29380788 | 0.82 | — | — | |
| SCHEMBL29615178 | 0.82 | — | — | |
| Selenium SCHEMBL2068312 | 0.78 | — | — | |
| Selenium SCHEMBL5481695 | 0.67 | — | — | |
| Selenium SCHEMBL2452564 | 0.67 | — | — | |
| SCHEMBL4900346 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 82 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240099167-A1 | PHASE CHANGE MATERIAL SWITCH WITH IMPROVED THERMAL DISSIPATION AND METHODS FOR FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED (TW) | 2024-03-21 | — | — | US | claimed |
| US-20230403954-A1 | PHASE CHANGE MATERIAL SWITCH WITH IMPROVED THERMAL CONFINEMENT AND METHODS FOR FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED (TW) | 2023-12-14 | — | — | US | claimed |
| US-10580976-B2 | Three-dimensional phase change memory device having a laterally constricted element and method of making the same | SANDISK TECHNOLOGIES LLC (US) | 2020-03-03 | — | — | US | claimed |
| US-10468596-B2 | Damascene process for forming three-dimensional cross rail phase change memory devices | SANDISK TECHNOLOGIES LLC (US) | 2019-11-05 | — | — | US | claimed |
| US-20190288192-A1 | THREE-DIMENSIONAL PHASE CHANGE MEMORY DEVICE HAVING A LATERALLY CONSTRICTED ELEMENT AND METHOD OF MAKING THE SAME | SanDisk Technologies, Inc. | 2019-09-19 | — | — | US | claimed |
| US-20190259772-A1 | AIR GAP THREE-DIMENSIONAL CROSS RAIL MEMORY DEVICE AND METHOD OF MAKING THEREOF | SanDisk Technologies, Inc. | 2019-08-22 | — | — | US | claimed |
| US-20190259946-A1 | DAMASCENE PROCESS FOR FORMING THREE-DIMENSIONAL CROSS RAIL PHASE CHANGE MEMORY DEVICES | SanDisk Technologies, Inc. | 2019-08-22 | — | — | US | claimed |
| US-10381366-B1 | Air gap three-dimensional cross rail memory device and method of making thereof | SANDISK TECHNOLOGIES LLC (US) | 2019-08-13 | — | — | US | claimed |
| US-10381411-B2 | Three-dimensional memory device containing conformal wrap around phase change material and method of manufacturing the same | SANDISK TECHNOLOGIES LLC (US) | 2019-08-13 | — | — | US | claimed |
| US-20190189688-A1 | THREE-DIMENSIONAL MEMORY DEVICE CONTAINING CONFORMAL WRAP AROUND PHASE CHANGE MATERIAL AND METHOD OF MANUFACTURING THE SAME | SanDisk Technologies, Inc. | 2019-06-20 | — | — | US | claimed |
| CN-222803360-U | Phase change material switch | 台湾积体电路制造股份有限公司 | 2025-04-25 | — | — | CN | disclosed |
| CN-118301945-A | Phase change memory and memory system | 新存科技(武汉)有限责任公司 | 2024-07-05 | — | — | CN | disclosed |
| US-20240224824-A1 | PHASE CHANGE MATERIAL RADIO-FREQUENCY SWITCH FOR LOW POWER CONSUMPTION AND METHODS FOR FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED (TW) | 2024-07-04 | — | — | US | disclosed |
| US-20240224823-A1 | PHASE CHANGE MATERIAL RADIO-FREQUENCY DEVICE AND METHODS FOR FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED (TW) | 2024-07-04 | — | — | US | disclosed |
| CN-118159124-A | Phase change material switch and method of manufacturing the same | 台湾积体电路制造股份有限公司 | 2024-06-07 | — | — | CN | disclosed |
| US-10249683-B1 | Three-dimensional phase change memory arrays and methods of manufacturing the same | SANDISK TECHNOLOGIES LLC (US) | 2019-04-02 | — | — | US | disclosed |
| US-10199434-B1 | Three-dimensional cross rail phase change memory device and method of manufacturing the same | SANDISK TECHNOLOGIES LLC (US) | 2019-02-05 | — | — | US | disclosed |
| US-8586427-B2 | Thin film transistors and methods of manufacturing thin film transistors | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2013-11-19 | — | — | US | disclosed |
| US-8022410-B2 | Thin film transistors | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-09-20 | — | — | US | disclosed |
| US-20100006849-A1 | Thin Film Transistors | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2010-01-14 | — | — | US | disclosed |