Predicted protein targets (top 9)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MEN1 | O00255 | 1/20 | 0.88 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.88 |
| ▸ | CA5A | P35218 | 1/20 | 0.46 |
| ▸ | CA5B | Q9Y2D0 | 1/20 | 0.46 |
| ▸ | TSHR | P16473 | 3/20 | 0.39 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.39 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.39 |
| ▸ | HPGD | P15428 | 1/20 | 0.36 |
| ▸ | HIF1A | Q16665 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Ammonia Solution, Strong SCHEMBL29907 | 1.00 | MEN1 (0.88) | MEN1KMT2ACA5ACA5BTSHR | |
| Ammonia Solution, Strong SCHEMBL1690185 | 0.94 | MEN1 (0.78) | MEN1KMT2ACA5ACA5BTSHR | |
| Water SCHEMBL3229361 | 0.94 | MEN1 (0.78) | MEN1KMT2ACA5ACA5BTSHR | |
| Water SCHEMBL5330986 | 0.94 | MEN1 (0.78) | MEN1KMT2ACA5ACA5BTSHR | |
| Water SCHEMBL19640167 | 0.94 | MEN1 (0.78) | MEN1KMT2ACA5ACA5BTSHR | |
| Water SCHEMBL8512246 | 0.94 | MEN1 (0.78) | MEN1KMT2ACA5ACA5BTSHR | |
| SCHEMBL27563952 | 0.94 | MEN1 (0.75) | MEN1KMT2ACA5ACA5BTSHR | |
| SCHEMBL6465752 | 0.94 | — | — | |
| SCHEMBL35227 | 0.94 | MEN1 (0.75) | MEN1KMT2ACA5ACA5BTSHR | |
| SCHEMBL23608133 | 0.88 | MEN1 (0.67) | MEN1KMT2ACA5ACA5BTSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 585 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8337715-B2 | CMP slurry for metallic film, polishing method and method of manufacturing semiconductor device | KABUSHIKI KAISHA TOSHIBA (JP) | 2012-12-25 | — | — | US | claimed |
| US-20120205010-A1 | CORROSION CONTROL METHOD OF METAL | HITACHI, LTD. | 2012-08-16 | — | — | US | claimed |
| US-8101668-B2 | polyvinyl alcohol grafted to 2-acrylamido-2-methylpropane sulfonic acid and salts, used in fuel cells as polyelectrolyte membranes, having excellent conductivity, capable of regulating hydrogen and methanol permeability | TOYOTA JIDOSHA KABUSHIKI KAISHA (JP) | 2012-01-24 | — | — | US | claimed |
| US-20110062374-A1 | CMP slurry for metallic film, polishing method and method of manufacturing semiconductor device | TOSHIBA MEMORY CORPORATION (JP) | 2011-03-17 | — | — | US | claimed |
| US-20100062687-A1 | CERIUM OXIDE POWDER FOR ABRASIVE AND CMP SLURRY COMPRISING THE SAME | LG CHEM, LTD. (KR) | 2010-03-11 | — | — | US | claimed |
| WO-2008136593-A1 | CERIUM OXIDE POWDER FOR ABRASIVE AND CMP SLURRY COMPRISING THE SAME | LG CHEM, LTD. (KR) | 2008-11-13 | — | — | WO | claimed |
| US-20080176966-A1 | Graft Polymer | YAMAGUCHI UNIVERSITY (JP) | 2008-07-24 | — | — | US | claimed |
| EP-1858938-A2 | GRAFT POLYMER | TOYOTA JIDOSHA KABUSHIKI KAISHA (JP) | 2007-11-28 | — | — | EP | claimed |
| US-20070128873-A1 | AQUEOUS DISPERSION FOR CMP, POLISHING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | KABUSHIKI KAISHA TOSHIBA (JP) | 2007-06-07 | — | — | US | claimed |
| CN-1290771-C | Method for continuous preparation of nanometer-sized hydrous zirconia sol | KOREAN RES INST OF CHEMICAL TE (KR) | 2006-12-20 | — | — | CN | claimed |
| US-20060243702-A1 | CMP slurry for metallic film, polishing method and method of manufacturing semiconductor device | TOSHIBA MEMORY CORPORATION (JP) | 2006-11-02 | — | — | US | claimed |
| WO-2006098484-A2 | GRAFT POLYMER | TOYOTA JIDOSHA KABUSHIKI KAISHA (JP) | 2006-09-21 | — | — | WO | claimed |
| CN-1692078-A | Method for continuously preparing nano-scale hydrous zirconia sol | KOREAN RES INST OF CHEMICAL TE (KR) | 2005-11-02 | — | — | CN | claimed |
| US-20050118095-A1 | Method for continuous preparation of nanometer-sized hydrous zirconia sol | KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY (KR) | 2005-06-02 | — | — | US | claimed |
| US-20040159960-A1 | Electronic device and method of manufacturing the same | HITACHI, LTD. (JP) | 2004-08-19 | — | — | US | claimed |
| EP-1445861-A2 | Electronic device and method of manufacturing the same | Hitachi Ltd. (JP) | 2004-08-11 | — | — | EP | claimed |
| US-5527647-A | FORMING HALFTONE PATTERN ON TRANSPARENT SUBSTRATE | FUJITSU LIMITED (JP) | 1996-06-18 | — | — | US | claimed |
| JP-6109411-A | — | — | None | — | — | JP | disclosed |
| US-5291536-A | X-ray mask, method for fabricating the same, and pattern formation method | KABUSHIKI KAISHA TOSHIBA (JP) | 1994-03-01 | — | — | US | disclosed |
| JP-H0448733-A | MULTILAYER WIRING AND ITS MANUFACTURE, AND FILM TRANSISTOR MATRIX WHEREIN IT IS USED | HITACHI LTD | 1992-02-18 | — | — | JP | disclosed |