⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10057928 | 1.00 | — | — | |
| SCHEMBL19375746 | 0.71 | — | — | |
| SCHEMBL20202895 | 0.69 | — | — | |
| SCHEMBL19624067 | 0.65 | — | — | |
| SCHEMBL16573556 | 0.63 | — | — | |
| SCHEMBL11173350 | 0.61 | — | — | |
| SCHEMBL4969030 | 0.60 | — | — | |
| SCHEMBL241691 | 0.60 | — | — | |
| SCHEMBL985476 | 0.60 | — | — | |
| SCHEMBL4549129 | 0.60 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-117096019-A | Methods and systems for forming memory devices and components thereof | ASM IP私人控股有限公司 | 2023-11-21 | — | — | CN | claimed |
| CN-118553731-A | Memory devices, components thereof, and related methods and systems | ASM IP私人控股有限公司 | 2024-08-27 | — | — | CN | disclosed |
| CN-117096019-A | Methods and systems for forming memory devices and components thereof | ASM IP私人控股有限公司 | 2023-11-21 | — | — | CN | disclosed |
| US-10600643-B2 | Method of forming thin film and method of manufacturing integrated circuit device using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2020-03-24 | — | — | US | disclosed |
| US-20180342391-A1 | METHOD OF FORMING THIN FILM AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2018-11-29 | — | — | US | disclosed |
| EP-1921061-B1 | METAL-CONTAINING COMPOUND, PROCESS FOR PRODUCING THE SAME AND METHOD OF FORMING A METAL-CONTAINING THIN FILM | TOSOH CORP (JP) | 2011-10-19 | — | — | EP | disclosed |
| US-7816549-B2 | Metal-containing compound, its production method, metal-containing thin film, and its formation method | TOSOH CORPORATION (JP) | 2010-10-19 | — | — | US | disclosed |
| US-20100105936-A1 | reaction of dialkylamino metal compound with a dialkylamidine; complex of tetrakis(dimethylamido)titanium and N,N'-diisopropylacetamidine; semiconductor; thermal stability; moderate vaporizability; liquid; stable to water; CVD or ALD atomic layer deposition; oxide of Al, Ga, Hafnium, indium, or titanium | TOSOH CORPORATION (JP) | 2010-04-29 | — | — | US | disclosed |
| US-7396949-B2 | Class of volatile compounds for the deposition of thin films of metals and metal compounds | PRESIDENT AND FELLOWS OF HARVARD COLLEGE | 2008-07-08 | — | — | US | disclosed |
| EP-1921061-A1 | METAL-CONTAINING COMPOUND, PROCESS FOR PRODUCING THE SAME, METAL-CONTAINING THIN FILM, AND METHOD OF FORMING THE SAME | Tosoh Corporation (JP) | 2008-05-14 | — | — | EP | disclosed |
| US-20050042372-A1 | Class of volatile compounds for the deposition of thin films of metals and metal compounds | PRESIDENT AND FELLOWS OF HARVARD COLLEGE | 2005-02-24 | — | — | US | disclosed |