Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HSD17B10 | Q99714 | 3/20 | 0.66 |
| ▸ | CYP2C9 | P11712 | 2/20 | 0.66 |
| ▸ | CYP2C19 | P33261 | 2/20 | 0.66 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.66 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.66 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.66 |
| ▸ | CA2 | P00918 | 3/20 | 0.46 |
| ▸ | MAPT | P10636 | 2/20 | 0.46 |
| ▸ | HIF1A | Q16665 | 2/20 | 0.43 |
| ▸ | HDAC8 | Q9BY41 | 1/20 | 0.41 |
| ▸ | MEN1 | O00255 | 2/20 | 0.41 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.41 |
| ▸ | MET | P08581 | 1/20 | 0.41 |
| ▸ | PIK3CA | P42336 | 1/20 | 0.40 |
| ▸ | CA1 | P00915 | 2/20 | 0.39 |
| ▸ | CA4 | P22748 | 1/20 | 0.39 |
| ▸ | CA6 | P23280 | 1/20 | 0.39 |
| ▸ | TSHR | P16473 | 1/20 | 0.39 |
| ▸ | SNCA | P37840 | 1/20 | 0.39 |
| ▸ | HSD17B2 | P37059 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13609011 | 0.83 | CYP2C9 (0.66) | HSD17B10CYP2C9CYP2C19CYP3A4CYP1A2 | |
| SCHEMBL30375459 | 0.82 | MAPT (0.48) | HSD17B10CYP2C9CYP2C19CYP3A4CYP1A2 | |
| SCHEMBL1269441 | 0.82 | MAPT (0.48) | HSD17B10CYP2C9CYP2C19CYP3A4CYP1A2 | |
| SCHEMBL27702905 | 0.80 | CYP3A4 (0.54) | HSD17B10CYP2C9CYP2C19CYP3A4CYP1A2 | |
| SCHEMBL71042 | 0.79 | HSD17B10 (0.63) | HSD17B10CYP2C9CYP2C19CYP3A4CYP1A2 | |
| SCHEMBL6249245 | 0.77 | CYP3A4 (0.57) | HSD17B10CYP2C9CYP2C19CYP3A4CYP1A2 | |
| SCHEMBL27906574 | 0.76 | KLKB1 (0.58) | HSD17B10CYP2C9CYP2C19CYP3A4CYP1A2 | |
| SCHEMBL14864961 | 0.76 | CYP2C9 (0.60) | HSD17B10CYP2C9CYP2C19CYP3A4CYP1A2 | |
| SCHEMBL14461926 | 0.74 | CYP2C9 (0.55) | HSD17B10CYP2C9CYP2C19CYP3A4CYP1A2 | |
| SCHEMBL11332215 | 0.74 | HIF1A (0.79) | HSD17B10CYP2C9CYP2C19CYP3A4CYP1A2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8288072-B2 | Antireflection film; fast etching speed whcih reduces deformation; accuracy; 2,3-epoxypropyl methacrylate ester-styrene copolymer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-10-16 | — | — | US | disclosed |
| US-8088554-B2 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2012-01-03 | — | — | US | disclosed |
| US-7871761-B2 | Resist lower layer material, resist lower layer substrate comprising the material and method for forming pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-01-18 | — | — | US | disclosed |
| US-7745104-B2 | Polymer having a hydrocarbon chain backbone and containing units derived from norbornadiene, indene, benzofuran, benzothiophene, acenaphthene, or vinyl pyrene, fluorene, phenanthrene, chrysene, naphthacene, pentacene, or acenaphthene; excellent etching resistance; shorter wavelengths | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-29 | — | — | US | disclosed |
| US-20100151382-A1 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-17 | — | — | US | disclosed |
| US-7687228-B2 | Antireflection film composition and patterning process using the same | SHIN ETSU CHEMICAL CO., LTD. (JP) | 2010-03-30 | — | — | US | disclosed |
| US-7476485-B2 | Resist lower layer film material and method for forming a pattern | SHIN-ESTU CHEMICAL CO., LTD. (JP) | 2009-01-13 | — | — | US | disclosed |
| US-20080227037-A1 | Resist lower layer film composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-09-18 | — | — | US | disclosed |
| US-20080220381-A1 | Antireflection film composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-09-11 | — | — | US | disclosed |
| EP-1798599-B1 | Antireflection film composition, patterning process and substrate using the same | SHINETSU CHEMICAL CO (JP) | 2008-08-06 | — | — | EP | disclosed |
| US-20080038662-A1 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-02-14 | — | — | US | disclosed |
| US-20080032231-A1 | Resist lower layer material, resist lower layer substrate comprising the material and method for forming pattern | SHIN-ETSU CHEMICAL CO., LTD. | 2008-02-07 | — | — | US | disclosed |
| EP-1798599-A1 | Antireflection film composition, patterning process and substrate using the same | Shinetsu Chemical Co., Ltd. (JP) | 2007-06-20 | — | — | EP | disclosed |
| US-20070134916-A1 | Antireflection film composition, patterning process and substrate using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-06-14 | — | — | US | disclosed |
| US-7214743-B2 | Resist lower layer film material and method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-08 | — | — | US | disclosed |
| US-20060234158-A1 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-10-19 | — | — | US | disclosed |
| US-20040259037-A1 | Resist lower layer film material and method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-12-23 | — | — | US | disclosed |
| US-20040241577-A1 | Resist lower layer film material and method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-12-02 | — | — | US | disclosed |