SCHEMBL25129653

SCHEMBL25129653

CCCCCCCCCCCCN(CCCCCCCCCCCC)C(=O)CCCCCCC

nearest known ligand 0.56

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CES2 O00748 3/20 0.52
CES1 P23141 3/20 0.52
KDM5A P29375 3/20 0.51
PHF8 Q9UPP1 3/20 0.51
KDM4C Q9H3R0 2/20 0.51
GPR84 Q9NQS5 6/20 0.50
PPARG P37231 6/20 0.50
PPARD Q03181 6/20 0.50
PPARA Q07869 6/20 0.50
HDAC11 Q96DB2 5/20 0.50
TSHR P16473 4/20 0.50
ALDH1A1 P00352 2/20 0.50
TLR2 O60603 2/20 0.50
TDP1 Q9NUW8 2/20 0.50
FABP4 P15090 2/20 0.50
PTPN1 P18031 2/20 0.50
SLC22A6 Q4U2R8 1/20 0.50
SLC22A8 Q8TCC7 1/20 0.50
MEN1 O00255 1/20 0.50
ESR1 P03372 1/20 0.50

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8070778 1.00 CES2 (0.52) CES2CES1KDM5APHF8KDM4C
SCHEMBL780516 1.00 CES2 (0.52) CES2CES1KDM5APHF8KDM4C
SCHEMBL782334 1.00 CES2 (0.52) CES2CES1KDM5APHF8KDM4C
SCHEMBL9694578 1.00 CES2 (0.52) CES2CES1KDM5APHF8KDM4C
SCHEMBL25129667 1.00 CES2 (0.52) CES2CES1KDM5APHF8KDM4C
SCHEMBL25129665 1.00 CES2 (0.52) CES2CES1KDM5APHF8KDM4C
SCHEMBL25129664 1.00 CES2 (0.52) CES2CES1KDM5APHF8KDM4C
SCHEMBL25129396 1.00 CES2 (0.52) CES2CES1KDM5APHF8KDM4C
SCHEMBL22605312 1.00 CES2 (0.52) CES2CES1KDM5APHF8KDM4C
SCHEMBL782419 1.00 CES2 (0.52) CES2CES1KDM5APHF8KDM4C

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11874603-B2 Photoresist composition comprising amide compound and pattern formation methods using the same ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2024-01-16 US disclosed
US-11874603-B2 Photoresist composition comprising amide compound and pattern formation methods using the same ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2024-01-16 US disclosed
US-11874603-B2 Photoresist composition comprising amide compound and pattern formation methods using the same ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2024-01-16 US disclosed
US-20230099348-A1 PHOTORESIST COMPOSITION COMPRISING AMIDE COMPOUND AND PATTERN FORMATION METHODS USING THE SAME DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2023-03-30 US disclosed
US-20230099348-A1 PHOTORESIST COMPOSITION COMPRISING AMIDE COMPOUND AND PATTERN FORMATION METHODS USING THE SAME DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2023-03-30 US disclosed
CN-115808844-A Photoresist composition comprising amide compound and pattern forming method using the same 罗门哈斯电子材料韩国有限公司 2023-03-17 CN disclosed