SCHEMBL25208136

SCHEMBL25208136

CCCC(I)(CC)CC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29284797 0.93
SCHEMBL5522033 0.85 FDPS (0.30)
SCHEMBL29284796 0.82 TSHR (0.32)
SCHEMBL29260490 0.80 TSHR (0.35)
SCHEMBL5523495 0.76
SCHEMBL1314530 0.72
Ammonia Solution, Strong SCHEMBL3902912 0.72
SCHEMBL2594382 0.71
SCHEMBL416741 0.69
SCHEMBL3940222 0.69

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260085408-A1 SHIELDING COMPOUND, METHOD OF FORMING THIN FILM USING SHIELDING COMPOUND, AND SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE FABRICATED USING METHOD SOULBRAIN CO LTD (KR) 2026-03-26 US disclosed
US-20250376765-A1 FILM QUALITY IMPROVER, METHOD OF FORMING THIN FILM USING FILM QUALITY IMPROVER, SEMICONDUCTOR SUBSTRATE FABRICATED USING METHOD, AND SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE SOULBRAIN CO LTD (KR) 2025-12-11 US disclosed
US-20250019827-A1 FILM QUALITY IMPROVER, METHOD OF FORMING THIN FILM USING FILM QUALITY IMPROVER, SEMICONDUCTOR SUBSTRATE FABRICATED USING METHOD, AND SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE SOULBRAIN CO., LTD. (KR) 2025-01-16 US disclosed
US-20250003067-A1 FILM QUALITY IMPROVER, METHOD OF FORMING THIN FILM USING FILM QUALITY IMPROVER, AND SEMICONDUCTOR SUBSTRATE FABRICATED USING METHOD SOULBRAIN CO., LTD. (KR) 2025-01-02 US disclosed
WO-2024054065-A1 SHIELDING COMPOUND, THIN FILM FORMATION METHOD USING SAME, AND SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE MANUFACTURED THEREFROM 솔브레인 주식회사 2024-03-14 WO disclosed
WO-2023096216-A1 FILM QUALITY IMPROVER, THIN FILM FORMING METHOD USING SAME, SEMICONDUCTOR SUBSTRATE MANUFACTURED THEREFROM, AND SEMICONDUCTOR DEVICE 솔브레인 주식회사 2023-06-01 WO disclosed
CN-101607857-A The manufacture method of alcohols TORAY FINE CHEMICAL CO LTD (JP) 2009-12-23 CN disclosed