SCHEMBL2531375

SCHEMBL2531375

COCC1=Cc2cccc3cccc1c23

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPK1 P28482 3/20 0.43
MEN1 O00255 1/20 0.43
MAPT P10636 1/20 0.43
KMT2A Q03164 1/20 0.43
ALDH1A1 P00352 4/20 0.36
CES2 O00748 1/20 0.36
BCHE P06276 1/20 0.36
CES1 P23141 1/20 0.36
MCL1 Q07820 1/20 0.36
S100A4 P26447 1/20 0.36
TSHR P16473 2/20 0.34
HSD17B10 Q99714 2/20 0.34
ATM Q13315 1/20 0.34
L3MBTL1 Q9Y468 1/20 0.34
CYP1B1 Q16678 1/20 0.33
CASP1 P29466 2/20 0.32
CASP7 P55210 2/20 0.32
CYP3A4 P08684 1/20 0.32
PABPC1 P11940 1/20 0.32
DNMT1 P26358 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL21870667 0.88 MEN1 (0.51) MAPK1MEN1MAPTKMT2AALDH1A1
SCHEMBL27335583 0.82 MAPK1 (0.47) MAPK1MEN1MAPTKMT2AALDH1A1
SCHEMBL4512216 0.79 MEN1 (0.47) MAPK1MEN1MAPTKMT2AALDH1A1
SCHEMBL2534276 0.79 KMT2A (0.41) MAPK1MEN1MAPTKMT2AALDH1A1
SCHEMBL9572802 0.78 MEN1 (0.44) MAPK1MEN1MAPTKMT2AALDH1A1
SCHEMBL9572800 0.78 MEN1 (0.47) MAPK1MEN1MAPTKMT2AALDH1A1
SCHEMBL7195529 0.76 MAPK1 (0.44) MAPK1MEN1MAPTKMT2AALDH1A1
SCHEMBL130313 0.76 MAPK1 (0.47) MAPK1MEN1MAPTKMT2AALDH1A1
SCHEMBL131339 0.76 MAPK1 (0.47) MAPK1MEN1MAPTKMT2AALDH1A1
SCHEMBL129396 0.76 MEN1 (0.47) MAPK1MEN1MAPTKMT2AALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8334338-B2 Composition for forming resist lower layer film JSR CORPORATION (JP) 2012-12-18 US disclosed
US-20110251323-A1 COMPOSITION FOR FORMING RESIST LOWER LAYER FILM JSR CORPORATION 2011-10-13 US disclosed
EP-1386904-B1 Acenaphthylene derivative, polymer, and antireflection film-forming composition JSR CORP (JP) 2008-09-17 EP disclosed
US-20070248911-A1 Pattern forming method and bilayer film IWASAWA HARUO 2007-10-25 US disclosed
US-7244549-B2 Pattern forming method and bilayer film JSR CORPORATION (JP) 2007-07-17 US disclosed
US-7037994-B2 Acenaphthylene derivative, polymer, and antireflection film-forming composition JSR CORPORATION (JP) 2006-05-02 US disclosed
US-20040034155-A1 Acenaphthylene derivative, polymer, and antireflection film-forming composition JSR CORPORATION (JP) 2004-02-19 US disclosed
EP-1386904-A1 Acenaphthylene derivative, polymer, and antireflection film-forming composition JSR Corporation (JP) 2004-02-04 EP disclosed
US-20030073040-A1 Pattern forming method and bilayer film JSR CORPORATION (JP) 2003-04-17 US disclosed