SCHEMBL25422909

SCHEMBL25422909

Oc1cc(O)c(F)c(-c2c(F)c(O)c(F)c(O)c2F)c1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ NQO1 P15559 1/20 0.39
▸ BCL2 P10415 1/20 0.33
▸ MCL1 Q07820 1/20 0.33
▸ CA12 O43570 1/20 0.33
▸ CA1 P00915 1/20 0.33
▸ CA9 Q16790 1/20 0.33
▸ ELANE P08246 2/20 0.32
▸ MEN1 O00255 2/20 0.32
▸ ALDH1A1 P00352 2/20 0.32
▸ POLB P06746 2/20 0.32
▸ CYP3A4 P08684 2/20 0.32
▸ MAPT P10636 2/20 0.32
▸ APEX1 P27695 2/20 0.32
▸ MAPK1 P28482 2/20 0.32
▸ KMT2A Q03164 2/20 0.32
▸ TDP1 Q9NUW8 2/20 0.32
▸ NPC1 O15118 1/20 0.32
▸ PTP4A3 O75365 1/20 0.32
▸ GMNN O75496 1/20 0.32
▸ LMNA P02545 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29006491 0.79 NQO1 (0.32) NQO1BCL2MCL1CA12CA1
SCHEMBL25421837 0.78 TAAR1 (0.34) CA12CA1CA9ESR1ESR2
SCHEMBL25422120 0.77 TTR (0.42) CA12CA1CA9ALDH1A1MAPT
SCHEMBL25422851 0.76 NQO1 (0.36) NQO1BCL2MCL1CA12CA1
SCHEMBL25421489 0.76 — —
SCHEMBL5949079 0.74 TAAR1 (0.34) NQO1CA12CA1CA9ESR1
SCHEMBL25421192 0.73 NQO1 (0.48) NQO1BCL2MCL1CA12CA1
SCHEMBL28611375 0.72 CA9 (0.50) NQO1CA12CA1CA9MEN1
SCHEMBL25421455 0.71 ALOX5 (0.45) CA1CA9ALDH1A1POLBMAPT
SCHEMBL5949203 0.71 — —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240122065-A1 METAL PATTERNING MATERIAL, AMINE COMPOUND, ELECTRONIC DEVICE, AND METHOD FOR FORMING METAL PATTERN TOSOH CORPORATION (JP) 2024-04-11 — — US disclosed
EP-4198163-A1 METAL PATTERNING MATERIAL, AMINE COMPOUND, ELECTRONIC DEVICE, AND METHOD FOR FORMING METAL PATTERN Tosoh Corporation (JP) 2023-06-21 — — EP disclosed
CN-116157382-A Material for metal patterning, amine compound, electronic device, and method for forming metal pattern 东曹株式会社 2023-05-23 — — CN disclosed
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