SCHEMBL25658014

SCHEMBL25658014

C1=C[SH](c2ccccc2)c2ccccc21

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28460204 0.84
Benzothiophene SCHEMBL29162675 0.74
SCHEMBL28736371 0.71 EHMT2 (0.34)
SCHEMBL28921525 0.70 FBP1 (0.30)
SCHEMBL29071447 0.70
SCHEMBL30415360 0.67
SCHEMBL29282157 0.67
SCHEMBL28443069 0.67
SCHEMBL28455852 0.65
SCHEMBL28589132 0.65

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024043121-A1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, AND COMPOUND AND INTERMEDIATE THEREFOR 東京応化工業株式会社 2024-02-29 WO disclosed
WO-2024043098-A1 RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND, AND INTERMEDIATE THEREOF 東京応化工業株式会社 2024-02-29 WO disclosed
US-11835857-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-12-05 US disclosed
US-11829068-B2 Resist composition, method of forming resist pattern, compound, and resin TOKYO OHKA KOGYO CO., LTD. (JP) 2023-11-28 US disclosed
EP-4279991-A1 NOVEL SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-22 EP disclosed
US-11822240-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-11-21 US disclosed
EP-4276533-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2023-11-15 EP disclosed
EP-4276534-A1 MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION Shin-Etsu Chemical Co., Ltd. (JP) 2023-11-15 EP disclosed
US-11780946-B2 Alternating copolymer, method of producing alternating copolymer, method of producing polymeric compound, and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-10 US disclosed
WO-2023189961-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN 東京応化工業株式会社 2023-10-05 WO disclosed
US-11709425-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-25 US disclosed
US-11703757-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-18 US disclosed
US-11703756-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-18 US disclosed
US-11693313-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-04 US disclosed
US-11693316-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-04 US disclosed
WO-2023120250-A1 ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND COMPOUND 富士フイルム株式会社 2023-06-29 WO disclosed
WO-2023112746-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN 東京応化工業株式会社 2023-06-22 WO disclosed
US-11656549-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-05-23 US disclosed
US-11650497-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-05-16 US disclosed
US-11644751-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-05-09 US disclosed