SCHEMBL25689802

SCHEMBL25689802

CCOc1ccc([SH]2CCCC2)c2ccccc12

nearest known ligand 0.45

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 9/20 0.45
LMNA P02545 6/20 0.45
TSHR P16473 6/20 0.45
HTT P42858 3/20 0.45
MCOLN3 Q8TDD5 1/20 0.45
HPGD P15428 6/20 0.40
NPSR1 Q6W5P4 3/20 0.40
MAPT P10636 3/20 0.40
ALOX12 P18054 2/20 0.40
NTSR1 P30989 1/20 0.40
CCR6 P51684 1/20 0.40
MCL1 Q07820 1/20 0.40
MEN1 O00255 1/20 0.37
KMT2A Q03164 1/20 0.37
SMN1; SMN2 Q16637 3/20 0.37
GAA P10253 2/20 0.37
KDM4E B2RXH2 1/20 0.37
RECQL P46063 1/20 0.37
HSD17B10 Q99714 3/20 0.36
PKM P14618 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25694926 0.98 ALDH1A1 (0.47) ALDH1A1LMNATSHRHTTMCOLN3
SCHEMBL25714980 0.88 CNR1 (0.44) TSHRHTTMEN1KMT2ASMN1; SMN2
SCHEMBL21820781 0.86 SLC2A1 (0.45) HTTMEN1KMT2ASMN1; SMN2GAA
SCHEMBL25803182 0.85 SLC2A1 (0.44) ALDH1A1LMNATSHRHTTMCOLN3
SCHEMBL25695018 0.84 CLCN2 (0.32) ALDH1A1LMNATSHRHTTMCOLN3
SCHEMBL25471110 0.83 KDM4E (0.37) ALDH1A1MEN1KMT2ASMN1; SMN2KDM4E
SCHEMBL26833219 0.83 HTT (0.34) ALDH1A1LMNATSHRHTTMCOLN3
SCHEMBL25695019 0.82 KDM4E (0.36) ALDH1A1LMNATSHRHTTMCOLN3
SCHEMBL25689801 0.81 IDO1 (0.47) ALDH1A1LMNAHTTMAPTSMN1; SMN2
SCHEMBL27436564 0.81 KDM4E (0.31) ALDH1A1LMNATSHRHTTMCOLN3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4276533-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2023-11-15 EP disclosed
EP-4276534-A1 MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION Shin-Etsu Chemical Co., Ltd. (JP) 2023-11-15 EP disclosed
WO-2023189502-A1 RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND PHOTODEGRADABLE BASE JSR株式会社 2023-10-05 WO disclosed
WO-2023120200-A1 RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMATION METHOD JSR株式会社 2023-06-29 WO disclosed
WO-2023090129-A1 RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN JSR株式会社 2023-05-25 WO disclosed
CN-102483574-A Radiation-sensitive resin composition and compound JSR CORP 2012-05-30 CN disclosed