SCHEMBL2575558

SCHEMBL2575558

C=C(C)C(=O)OCCC[Si](CCCOC(=O)C(=C)C)(O[Si](c1ccccc1)(c1ccccc1)c1ccccc1)c1ccccc1

nearest known ligand 0.44

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 3/20 0.44
POLB P06746 1/20 0.44
APEX1 P27695 1/20 0.44
HTT P42858 1/20 0.44
TSHR P16473 5/20 0.41
THRB P10828 1/20 0.36
ELANE P08246 1/20 0.34
CA1 P00915 1/20 0.33
CA2 P00918 1/20 0.33
L3MBTL1 Q9Y468 3/20 0.32
ALDH1A1 P00352 2/20 0.32
MAPT P10636 1/20 0.32
MAPK1 P28482 2/20 0.31
KDM4E B2RXH2 1/20 0.31
LMNA P02545 1/20 0.31
TP53 P04637 1/20 0.31
CYP3A4 P08684 1/20 0.31
GAA P10253 1/20 0.30
SMN1; SMN2 Q16637 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5606079 0.88 TDP1 (0.45) TDP1POLBAPEX1HTTTSHR
SCHEMBL1398279 0.87 TDP1 (0.44) TDP1POLBAPEX1HTTTSHR
SCHEMBL13488578 0.87 TDP1 (0.44) TDP1POLBAPEX1HTTTSHR
SCHEMBL14455639 0.83 TDP1 (0.46) TDP1POLBAPEX1HTTTSHR
SCHEMBL2367809 0.82 TDP1 (0.47) TDP1POLBAPEX1HTTTSHR
SCHEMBL10629482 0.82 TDP1 (0.49) TDP1POLBAPEX1HTTTSHR
SCHEMBL13488577 0.82 TDP1 (0.49) TDP1POLBAPEX1HTTTSHR
SCHEMBL17373022 0.82 TDP1 (0.49) TDP1POLBAPEX1HTTTSHR
SCHEMBL26282469 0.81 TDP1 (0.48) TDP1POLBAPEX1HTTTSHR
SCHEMBL3101732 0.81 TDP1 (0.48) TDP1POLBAPEX1HTTTSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9946158-B2 Composition for forming resist underlayer film for nanoimprint NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-04-17 US disclosed
EP-2461350-B1 USE OF A COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT LITHOGRAPHY NISSAN CHEMICAL IND LTD (JP) 2018-02-28 EP disclosed
US-20150099070-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT NISSAN CHEMICAL IND LTD (JP) 2015-04-09 US disclosed
EP-2461350-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT LITHOGRAPHY Nissan Chemical Industries, Ltd. (JP) 2012-06-06 EP disclosed
US-20120128891-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2012-05-24 US disclosed
US-8048615-B2 Silicon-containing resist underlayer coating forming composition for forming photo-crosslinking cured resist underlayer coating NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2011-11-01 US disclosed
US-20090162782-A1 Silicon-Containing Resist Underlayer Coating Forming Composition for Forming Photo-Crosslinking Cured Resist Underlayer Coating NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2009-06-25 US disclosed
EP-1972998-A1 SILICON-CONTAINING RESIST UNDERLYING LAYER FILM FORMING COMPOSITION FOR FORMATION OF PHOTOCROSSLINKING CURED RESIST UNDERLYING LAYER FILM Nissan Chemical Industries, Ltd. (JP) 2008-09-24 EP disclosed