SCHEMBL25895600

SCHEMBL25895600

N#CC12CC3CC1C(OC2=O)C3N

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL23504929 0.87 — —
SCHEMBL22201020 0.81 — —
SCHEMBL13929703 0.81 — —
SCHEMBL19850946 0.81 — —
SCHEMBL14890698 0.77 — —
SCHEMBL13515813 0.76 — —
SCHEMBL13701177 0.74 — —
SCHEMBL3750371 0.71 — —
SCHEMBL22114924 0.71 — —
SCHEMBL12783141 0.71 — —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024127977-A1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND ACID DIFFUSION CONTROL AGENT 東京応化工業株式会社 2024-06-20 — — WO disclosed
WO-2024122425-A1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND ACID DIFFUSION CONTROL AGENT 東京応化工業株式会社 2024-06-13 — — WO disclosed
WO-2024043121-A1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, AND COMPOUND AND INTERMEDIATE THEREFOR 東京応化工業株式会社 2024-02-29 — — WO disclosed
WO-2024043098-A1 RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND, AND INTERMEDIATE THEREOF 東京応化工業株式会社 2024-02-29 — — WO disclosed
WO-2023223865-A1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND ACID DIFFUSION CONTROL AGENT 東京応化工業株式会社 2023-11-23 — — WO disclosed
WO-2023223897-A1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, AND COMPOUND 東京応化工業株式会社 2023-11-23 — — WO disclosed
WO-2023195407-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN 東京応化工業株式会社 2023-10-12 — — WO disclosed
WO-2023189961-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN 東京応化工業株式会社 2023-10-05 — — WO disclosed
WO-2023171743-A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, COMPOUND, AND POLYMER 東京応化工業株式会社 2023-09-14 — — WO disclosed
WO-2023162907-A1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND ACID GENERATION AGENT 東京応化工業株式会社 2023-08-31 — — WO disclosed
WO-2023163008-A1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND POLYMER COMPOUND 東京応化工業株式会社 2023-08-31 — — WO disclosed
WO-2023140231-A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND COMPOUND 東京応化工業株式会社 2023-07-27 — — WO disclosed
WO-2023140364-A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, COMPOUND, AND POLYMER 東京応化工業株式会社 2023-07-27 — — WO disclosed
WO-2023068251-A1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND ACID DIFFUSION CONTROL AGENT 東京応化工業株式会社 2023-04-27 — — WO disclosed
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