SCHEMBL2603156

SCHEMBL2603156

Cc1cc2cc3c(C)c4cc5sc(C)cc5cc4c(C)c3cc2s1

nearest known ligand 0.36

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
▸ ALDH1A1 P00352 1/20 0.36
▸ GFER P55789 1/20 0.32
▸ HSD17B10 Q99714 1/20 0.32
▸ PKM P14618 1/20 0.31
▸ NPSR1 Q6W5P4 1/20 0.31
▸ RXFP1 Q9HBX9 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18352051 0.84 ALDH1A1 (0.35) ALDH1A1HSD17B10PKM
SCHEMBL13556946 0.82 ALDH1A1 (0.34) ALDH1A1
SCHEMBL2742924 0.82 ALDH1A1 (0.38) ALDH1A1GFERHSD17B10PKMNPSR1
SCHEMBL17432145 0.81 ALDH1A1 (0.36) ALDH1A1
SCHEMBL18386527 0.81 ALDH1A1 (0.36) ALDH1A1HSD17B10PKM
SCHEMBL19061829 0.80 ALDH1A1 (0.33) ALDH1A1
SCHEMBL15281129 0.80 ALDH1A1 (0.39) ALDH1A1GFERHSD17B10PKMNPSR1
SCHEMBL4420009 0.79 ALDH1A1 (0.39) ALDH1A1GFERHSD17B10PKMNPSR1
SCHEMBL19222460 0.79 ALDH1A1 (0.39) ALDH1A1HSD17B10
SCHEMBL18177592 0.79 ALDH1A1 (0.39) ALDH1A1HSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9653159-B2 Memory device based on conductance switching in polymer/electrolyte junctions XEROX CORPORATION (US) 2017-05-16 — — US disclosed
US-9525135-B2 Thixotropic composition XEROX CORPORATION (US) 2016-12-20 — — US disclosed
US-8940235-B2 Thin-film transistors for chemical sensor applications SAMSUNG ELECTRONICS CO., LTD. (KR) 2015-01-27 — — US disclosed
US-8890123-B2 Semiconductor composition including a semiconducting polymer SAMSUNG ELECTRONICS CO. LTD. (KR) 2014-11-18 — — US disclosed
US-20140209840-A1 THIXOTROPIC COMPOSITION XEROX CORPORATION (US) 2014-07-31 — — US disclosed
US-8759421-B2 Continuous process for preparing nanodispersions using an ultrasonic flow-through heat exchanger SAMSUNG ELECTRONICS CO., LTD. (KR) 2014-06-24 — — US disclosed
US-8748873-B2 Electronic device with dual semiconducting layer SAMSUNG ELECTRONICS CO., LTD. (KR) 2014-06-10 — — US disclosed
US-8734683-B2 Graphene nano-sheets and methods for making the same XEROX CORPORATION (US) 2014-05-27 — — US disclosed
US-20130182520-A1 MEMORY DEVICE BASED ON CONDUCTANCE SWITCHING IN POLYMER/ELECTROLYTE JUNCTIONS NATIONAL RESEARCH COUNCIL OF CANADA (CA) 2013-07-18 — — US disclosed
US-20130136684-A1 GRAPHENE NANO-SHEETS AND METHODS FOR MAKING THE SAME XEROX CORPORATION (US) 2013-05-30 — — US disclosed
US-20120097250-A1 PHOTOVOLTAIC DEVICE XEROX CORPORATION (US) 2012-04-26 — — US disclosed
US-8164089-B2 Electronic device XEROX CORPORATION (US) 2012-04-24 — — US disclosed
US-8158744-B1 Dithioketopyrrolopyrrole-based polymers XEROX CORPORATION (US) 2012-04-17 — — US disclosed
US-20120049163-A1 Continuous Process For Preparing Nanodispersions Using An Ultrasonic Flow-Through Heat Exchanger XEROX CORPORATION (US) 2012-03-01 — — US disclosed
US-8030126-B2 Printing process for enhanced jetted performance of semiconductor layer XEROX CORPORATION (US) 2011-10-04 — — US disclosed
US-7928433-B2 Electronic device comprising semiconducting polymers XEROX CORPORATION (US) 2011-04-19 — — US disclosed
US-7928181-B2 Semiconducting polymers XEROX CORPORATION (US) 2011-04-19 — — US disclosed
US-20110084252-A1 ELECTRONIC DEVICE XEROX CORPORATION (US) 2011-04-14 — — US disclosed
US-20110065232-A1 PRINTING PROCESS FOR ENHANCED JETTED PERFORMANCE OF SEMICONDUCTOR LAYER XEROX CORPORATION (US) 2011-03-17 — — US disclosed
US-20100038631-A1 ELECTRONIC DEVICE COMPRISING SEMICONDUCTING POLYMERS XEROX CORPORATION (US) 2010-02-18 — — US disclosed
Send feedback