SCHEMBL2607803

SCHEMBL2607803

C/C(=N\OS(C)(=O)=O)c1ccc(OCCCOc2ccc(/C(=N/OS(=O)(=O)C(F)(F)F)C(F)(F)F)cc2)cc1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
FURIN P09958 1/20 0.40
CA12 O43570 2/20 0.39
CA1 P00915 2/20 0.39
CA2 P00918 2/20 0.39
CA9 Q16790 2/20 0.39
L3MBTL1 Q9Y468 1/20 0.36
GAA P10253 1/20 0.35
PLA2G4B P0C869 1/20 0.34
TSHR P16473 2/20 0.34
USP2 O75604 1/20 0.34
ALOX15 P16050 1/20 0.34
MAPK1 P28482 1/20 0.34
HSD17B10 Q99714 1/20 0.34
PPARG P37231 4/20 0.33
PPARA Q07869 4/20 0.33
PPARD Q03181 1/20 0.33
MAPT P10636 1/20 0.33
PKM P14618 1/20 0.33
CDK5 Q00535 1/20 0.33
CDK5R1 Q15078 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12641556 0.94 FURIN (0.44) FURINCA12CA1CA2CA9
SCHEMBL11965481 0.89 FURIN (0.48) FURINCA12CA1CA2CA9
SCHEMBL546602 0.88 CA12 (0.44) CA12CA1CA2CA9L3MBTL1
SCHEMBL2610224 0.88 CA12 (0.44) CA12CA1CA2CA9L3MBTL1
SCHEMBL4624322 0.88 CA12 (0.44) FURINCA12CA1CA2CA9
SCHEMBL12848022 0.88 CA12 (0.44) FURINCA12CA1CA2CA9
SCHEMBL4624320 0.88 CA12 (0.44) FURINCA12CA1CA2CA9
SCHEMBL546603 0.88 CA12 (0.44) CA12CA1CA2CA9L3MBTL1
SCHEMBL15929681 0.86 FURIN (0.38) FURINCA12CA1CA2CA9
SCHEMBL17762976 0.85 CA12 (0.40) FURINCA12CA1CA2CA9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 43 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9523913-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-12-20 US disclosed
US-9513547-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-12-06 US disclosed
US-9500951-B2 Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-11-22 US disclosed
US-9459531-B2 2016-10-04 US disclosed
US-9323150-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern FUJIFILM CORPORATION (JP) 2016-04-26 US disclosed
US-9285679-B2 Actinic ray-sensitive or radiation-sensitive composition, and resist film, resist-coated mask blanks, resist pattern forming method and photomask each using the composition FUJIFILM CORPORATION (JP) 2016-03-15 US disclosed
US-9223208-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2015-12-29 US disclosed
US-9188865-B2 Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2015-11-17 US disclosed
US-9188862-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the same FUJIFILM CORPORATION (JP) 2015-11-17 US disclosed
US-20150293446-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-10-15 US disclosed
US-20130052567-A1 RESIST PATTERN FORMING METHOD, RESIST PATTERN, CROSSLINKABLE NEGATIVE RESIST COMPOSITION, NANOIMPRINT MOLD AND PHOTOMASK FUJIFILM CORPORATION (JP) 2013-02-28 US disclosed
US-20130045365-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2013-02-21 US disclosed
US-8349535-B2 Actinic ray-sensitive or radiation-sensitive resin composition and method of forming pattern therewith FUJIFILM CORPORATION (JP) 2013-01-08 US disclosed
US-20120301831-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2012-11-29 US disclosed
US-20120244472-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, FILM FORMED USING THE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2012-09-27 US disclosed
US-20120231393-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING A PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2012-09-13 US disclosed
US-20120094237-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2012-04-19 US disclosed
US-20120076997-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2012-03-29 US disclosed
US-20120003590-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-05 US disclosed
US-20110081612-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH FUJIFILM CORPORATION (JP) 2011-04-07 US disclosed