SCHEMBL2610387

SCHEMBL2610387

CCCCCCCCS(=O)(=O)O/N=C(/c1ccc(OCCCOc2ccc(/C(=N/OS(=O)(=O)CCCCCCCC)C(F)(F)F)cc2)cc1)C(F)(F)F

nearest known ligand 0.48

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
PLA2G4B P0C869 6/20 0.48
TP53 P04637 2/20 0.46
TSHR P16473 1/20 0.46
RARB P10826 3/20 0.43
GAA P10253 2/20 0.43
RAB9A P51151 2/20 0.43
NPC1 O15118 1/20 0.43
LMNA P02545 1/20 0.43
MAPT P10636 1/20 0.43
ALOX15 P16050 1/20 0.43
HSD17B10 Q99714 1/20 0.43
PLA2G4A P47712 1/20 0.41
SLC2A1 P11166 2/20 0.41
NR5A1 Q13285 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2610386 0.95 PLA2G4B (0.44) PLA2G4BTP53TSHRRARBGAA
SCHEMBL546992 0.95 PLA2G4B (0.44) PLA2G4BTP53TSHRRARBGAA
SCHEMBL546993 0.95 PLA2G4B (0.44) PLA2G4BTP53TSHRRARBGAA
SCHEMBL2607730 0.94 PLA2G4B (0.43) PLA2G4BTP53TSHRRARBGAA
SCHEMBL7245963 0.93 TP53 (0.49) PLA2G4BTP53TSHRRARBGAA
SCHEMBL7245446 0.93 TP53 (0.49) PLA2G4BTP53TSHRRARBGAA
SCHEMBL3215754 0.93 PLA2G4B (0.42) PLA2G4BTP53TSHRRARBGAA
SCHEMBL546644 0.91 PLA2G4B (0.42) PLA2G4BTP53TSHRRARBGAA
SCHEMBL546645 0.91 PLA2G4B (0.42) PLA2G4BTP53TSHRRARBGAA
SCHEMBL14947458 0.91 PLA2G4B (0.42) PLA2G4BTP53TSHRRARBGAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9523913-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-12-20 US disclosed
US-9513547-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-12-06 US disclosed
US-9223208-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2015-12-29 US disclosed
US-20150253662-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-09-10 US disclosed
US-9128376-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2015-09-08 US disclosed
US-20150147699-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-05-28 US disclosed
US-8968988-B2 Resist pattern forming method, resist pattern, crosslinkable negative resist composition, nanoimprint mold and photomask FUJIFILM CORPORATION (JP) 2015-03-03 US disclosed
US-20150010855-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, AND RESIST FILM, RESIST-COATED MASK BLANKS, RESIST PATTERN FORMING METHOD AND PHOTOMASK EACH USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2015-01-08 US disclosed
US-8906600-B2 Resist pattern forming method, resist pattern, positive resist composition, nanoimprint mold and photomask FUJIFILM CORPORATION (JP) 2014-12-09 US disclosed
US-8877423-B2 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2014-11-04 US disclosed
US-20130052568-A1 RESIST PATTERN FORMING METHOD, RESIST PATTERN, POSITIVE RESIST COMPOSITION, NANOIMPRINT MOLD AND PHOTOMASK FUJIFILM CORPORATION (JP) 2013-02-28 US disclosed
US-20130052567-A1 RESIST PATTERN FORMING METHOD, RESIST PATTERN, CROSSLINKABLE NEGATIVE RESIST COMPOSITION, NANOIMPRINT MOLD AND PHOTOMASK FUJIFILM CORPORATION (JP) 2013-02-28 US disclosed
US-8349535-B2 Actinic ray-sensitive or radiation-sensitive resin composition and method of forming pattern therewith FUJIFILM CORPORATION (JP) 2013-01-08 US disclosed
WO-2013002295-A1 METHOD OF FORMING PATTERN AND ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION FUJIFILM CORPORATION (JP) 2013-01-03 WO disclosed
US-20120094237-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2012-04-19 US disclosed
US-7923196-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2011-04-12 US disclosed
US-7923196-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2011-04-12 US disclosed
US-20110081612-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH FUJIFILM CORPORATION (JP) 2011-04-07 US disclosed
US-20100248146-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-09-30 US disclosed
US-20100248146-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-09-30 US disclosed