⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28269573 | 0.87 | — | — | |
| SCHEMBL23647334 | 0.82 | — | — | |
| SCHEMBL7169787 | 0.82 | — | — | |
| SCHEMBL196155 | 0.82 | — | — | |
| SCHEMBL1779305 | 0.82 | — | — | |
| SCHEMBL8504992 | 0.82 | — | — | |
| SCHEMBL28431343 | 0.82 | — | — | |
| SCHEMBL628355 | 0.82 | — | — | |
| SCHEMBL841304 | 0.82 | — | — | |
| SCHEMBL11519009 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2023179120-A9 | ELECTRONIC DEVICE | 荣耀终端有限公司 | 2023-11-16 | — | — | WO | claimed |
| WO-2023179120-A1 | ELECTRONIC DEVICE | 荣耀终端有限公司 | 2023-09-28 | — | — | WO | claimed |
| CN-114710927-B | Electronic equipment | 荣耀终端有限公司 | 2023-06-09 | — | — | CN | claimed |
| CN-114710927-A | Electronic device | 荣耀终端有限公司 | 2022-07-05 | — | — | CN | claimed |
| CN-112059181-B | Nickel-manganese-indium shape memory alloy part and 4D forming method thereof | 中国地质大学（武汉） | 2022-02-01 | — | — | CN | claimed |
| CN-112059181-A | Nickel-manganese-indium shape memory alloy part and 4D forming method thereof | 中国地质大学（武汉） | 2020-12-11 | — | — | CN | claimed |
| CN-109267152-A | A kind of preparation method of the nickel manganese-base alloy columnar single crystal particle of controlled diameter | 哈尔滨工业大学 | 2019-01-25 | — | — | CN | claimed |
| CN-116251963-B | Nickel-manganese-tin-cobalt alloy with room temperature magnetic phase change performance and efficient additive manufacturing method and application thereof | 吉林大学 | 2024-08-09 | — | — | CN | disclosed |
| WO-2023179120-A9 | ELECTRONIC DEVICE | 荣耀终端有限公司 | 2023-11-16 | — | — | WO | disclosed |
| WO-2023179120-A1 | ELECTRONIC DEVICE | 荣耀终端有限公司 | 2023-09-28 | — | — | WO | disclosed |
| CN-116275065-A | Nickel-manganese-based alloy porous material and simple preparation method and application thereof | 吉林大学 | 2023-06-23 | — | — | CN | disclosed |
| CN-116251963-A | Nickel-manganese-tin-cobalt alloy with room temperature magnetic phase change performance and efficient additive manufacturing method and application thereof | 吉林大学 | 2023-06-13 | — | — | CN | disclosed |
| CN-114710927-B | Electronic equipment | 荣耀终端有限公司 | 2023-06-09 | — | — | CN | disclosed |
| CN-112059181-B | Nickel-manganese-indium shape memory alloy part and 4D forming method thereof | 中国地质大学（武汉） | 2022-02-01 | — | — | CN | disclosed |
| CN-112059181-B | Nickel-manganese-indium shape memory alloy part and 4D forming method thereof | 中国地质大学（武汉） | 2022-02-01 | — | — | CN | disclosed |
| CN-112059181-B | Nickel-manganese-indium shape memory alloy part and 4D forming method thereof | 中国地质大学（武汉） | 2022-02-01 | — | — | CN | disclosed |
| CN-112059181-A | Nickel-manganese-indium shape memory alloy part and 4D forming method thereof | 中国地质大学（武汉） | 2020-12-11 | — | — | CN | disclosed |
| CN-112059181-A | Nickel-manganese-indium shape memory alloy part and 4D forming method thereof | 中国地质大学（武汉） | 2020-12-11 | — | — | CN | disclosed |
| CN-112059181-A | Nickel-manganese-indium shape memory alloy part and 4D forming method thereof | 中国地质大学（武汉） | 2020-12-11 | — | — | CN | disclosed |
| CN-109267152-A | A kind of preparation method of the nickel manganese-base alloy columnar single crystal particle of controlled diameter | 哈尔滨工业大学 | 2019-01-25 | — | — | CN | disclosed |