SCHEMBL26233735

SCHEMBL26233735

C=C(C)C(=O)OC1C2CC3C1OC(=O)C3C2C(=O)OCCC(F)C(F)(F)S(=O)(=O)O

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18232582 0.91 — —
SCHEMBL24268479 0.88 — —
SCHEMBL16020886 0.85 — —
SCHEMBL23351106 0.85 — —
SCHEMBL26488799 0.84 — —
SCHEMBL10134898 0.84 — —
SCHEMBL18235964 0.84 — —
SCHEMBL23351279 0.84 KCNH2 (0.33) —
SCHEMBL23599987 0.83 — —
SCHEMBL18232601 0.83 — —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2023171670-A1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND POLYMER COMPOUND 東京応化工業株式会社 2023-09-14 — — WO disclosed
US-20230132653-A1 MOLECULAR RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-04 — — US disclosed
US-20230132653-A1 MOLECULAR RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-04 — — US disclosed
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