SCHEMBL26312671

SCHEMBL26312671

CC(=O)Nc1c(I)cc(I)cc1C(=O)OC(C(C)C)C(F)(F)C(=O)O

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL23059985 0.83 SOS1 (0.31) —
SCHEMBL23559308 0.82 TTR (0.36) —
SCHEMBL23559438 0.80 TPMT (0.33) —
SCHEMBL23559265 0.79 — —
SCHEMBL23559268 0.78 CA12 (0.33) —
SCHEMBL23559442 0.77 POLB (0.32) —
SCHEMBL23559448 0.77 LMNA (0.46) —
SCHEMBL23559322 0.75 HPGD (0.32) —
SCHEMBL23559358 0.75 HPGD (0.34) —
SCHEMBL26938027 0.75 CA12 (0.36) —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230296981-A1 RESIST MATERIAL AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-21 — — US disclosed
US-20230296981-A1 RESIST MATERIAL AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-21 — — US disclosed
US-20230296980-A1 RESIST MATERIAL AND PATTERN FORMING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-21 — — US disclosed
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