SCHEMBL2680728

SCHEMBL2680728

CCC(C)(F)C(=O)OC1CCCCC1

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
EPHX1 P07099 2/20 0.47
CYP19A1 P11511 2/20 0.45
NAAA Q02083 2/20 0.44
HTT P42858 4/20 0.39
CYP2C19 P33261 1/20 0.38
SMN1; SMN2 Q16637 2/20 0.36
NPC1 O15118 1/20 0.36
RAB9A P51151 1/20 0.36
PDK1 Q15118 1/20 0.34
PDK2 Q15119 1/20 0.34
PDK3 Q15120 1/20 0.34
PDK4 Q16654 1/20 0.34
CHRM3 P20309 4/20 0.34
KDM4E B2RXH2 1/20 0.34
GPR35 Q9HC97 1/20 0.34
ALDH1A1 P00352 1/20 0.33
MLNR O43193 1/20 0.33
CHRM2 P08172 1/20 0.33
CHRM1 P11229 1/20 0.33
HTR2A P28223 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2681186 0.98 EPHX1 (0.44) EPHX1CYP19A1NAAAHTTCYP2C19
SCHEMBL27430773 0.84 CYP19A1 (0.44) EPHX1CYP19A1NAAAHTTCYP2C19
SCHEMBL19105261 0.84 EPHX1 (0.49) EPHX1CYP19A1NAAAHTTCYP2C19
SCHEMBL110743 0.83 EPHX1 (0.45) EPHX1CYP19A1NAAAHTTCYP2C19
SCHEMBL13127639 0.83 EPHX1 (0.45) EPHX1CYP19A1NAAAHTTCYP2C19
SCHEMBL131561 0.81 EPHX1 (0.50) EPHX1CYP19A1NAAAHTTCYP2C19
SCHEMBL14725806 0.81 EPHX1 (0.50) EPHX1CYP19A1NAAAHTTCYP2C19
SCHEMBL108478 0.81 EPHX1 (0.50) EPHX1CYP19A1NAAAHTTCYP2C19
SCHEMBL3434643 0.81 EPHX1 (0.50) EPHX1CYP19A1NAAAHTTCYP2C19
SCHEMBL20388945 0.81 EPHX1 (0.50) EPHX1CYP19A1NAAAHTTCYP2C19

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20120249995-A1 RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO. LTD. (JP) 2012-10-04 US disclosed
US-8088537-B2 Resist top coat composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-03 US disclosed
US-7642034-B2 Photoresists; (meth)acrylate fluoropolymer which is insoluble in water, dissolvable in aqueous alkaline solution, and immiscible with resist films so that it enables pattern formation by the immersion lithography SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-01-05 US disclosed
US-7488567-B2 Polymer, resist composition and patterning process PANASONIC CORPORATION (JP) 2009-02-10 US disclosed
US-20070178407-A1 Polymer, resist protective coating material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-08-02 US disclosed
US-20070122736-A1 RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. 2007-05-31 US disclosed
US-20070122741-A1 Resist protective coating material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-31 US disclosed