SCHEMBL2680732

SCHEMBL2680732

CCCCC1CCC(OC(=O)C(C)(CC)C(F)(F)F)CC1

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NAAA Q02083 3/20 0.44
MAPT P10636 1/20 0.38
POLB P06746 1/20 0.36
HPGD P15428 1/20 0.36
CYP1A2 P05177 2/20 0.36
HTT P42858 2/20 0.35
LMNA P02545 1/20 0.35
MAPK1 P28482 1/20 0.35
PKM P14618 1/20 0.33
REN P00797 1/20 0.32
MEN1 O00255 1/20 0.32
KMT2A Q03164 1/20 0.32
MLNR O43193 1/20 0.32
CHRM2 P08172 1/20 0.32
CHRM1 P11229 1/20 0.32
CHRM3 P20309 1/20 0.32
HTR2A P28223 1/20 0.32
HTR2C P28335 1/20 0.32
HRH1 P35367 1/20 0.32
OPRM1 P35372 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2681501 0.82 NAAA (0.48) NAAAMAPTPOLBHPGDCYP1A2
SCHEMBL9973337 0.82 CYP19A1 (0.36) MLNRCHRM2CHRM1CHRM3HTR2A
SCHEMBL2681282 0.82 EPHX1 (0.42) NAAAHTTLMNAMLNRCHRM2
SCHEMBL108728 0.81 APOBEC3A (0.43) MAPTHTTMEN1KMT2AMLNR
SCHEMBL110743 0.80 EPHX1 (0.45) NAAAHTTMLNRCHRM2CHRM1
SCHEMBL13127639 0.80 EPHX1 (0.45) NAAAHTTMLNRCHRM2CHRM1
SCHEMBL6746660 0.79 NAAA (0.46) NAAAMAPTPOLBHPGDCYP1A2
SCHEMBL6750506 0.79 NAAA (0.46) NAAAMAPTPOLBHPGDCYP1A2
SCHEMBL12939479 0.78 APOBEC3A (0.33) MAPTHTTLIPA
SCHEMBL13716004 0.78 APOBEC3A (0.33) MAPTHTTLIPA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20120249995-A1 RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO. LTD. (JP) 2012-10-04 US disclosed
US-8088537-B2 Resist top coat composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-03 US disclosed
US-7642034-B2 Photoresists; (meth)acrylate fluoropolymer which is insoluble in water, dissolvable in aqueous alkaline solution, and immiscible with resist films so that it enables pattern formation by the immersion lithography SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-01-05 US disclosed
US-20070178407-A1 Polymer, resist protective coating material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-08-02 US disclosed
US-20070122736-A1 RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. 2007-05-31 US disclosed
US-20070122741-A1 Resist protective coating material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-31 US disclosed