SCHEMBL2684716

SCHEMBL2684716

OC(C(F)(F)F)(C(F)(F)F)C12C=CC(CC1)C2

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3423924 0.80
SCHEMBL4322137 0.80
SCHEMBL9125741 0.76
SCHEMBL30482526 0.74
SCHEMBL1469703 0.67
SCHEMBL2244021 0.66
SCHEMBL15397905 0.66
SCHEMBL18653588 0.66
SCHEMBL15105519 0.62
SCHEMBL1277405 0.60

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1811339-B1 Pattern forming method FUJIFILM CORP (JP) 2021-03-17 EP disclosed
EP-1795963-B1 Positive resist composition and pattern forming method using the same FUJIFILM CORP (JP) 2018-11-07 EP disclosed
US-9835945-B2 Positive resist composition and method of pattern formation with the same FUJIFILM CORPORATION (JP) 2017-12-05 US disclosed
US-20170123318-A1 POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME FUJIFILM CORPORATION (JP) 2017-05-04 US disclosed
US-9541831-B2 Positive resist composition and method of pattern formation with the same FUJIFILM CORPORATION (JP) 2017-01-10 US disclosed
EP-1754999-B1 Positive resist composition and method of pattern formation with the same FUJIFILM CORP (JP) 2016-06-29 EP disclosed
US-20150185609-A1 POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME FUJIFILM CORPORATION (JP) 2015-07-02 US disclosed
US-9057952-B2 Positive resist composition and method of pattern formation with the same FUJIFILM CORPORATION (JP) 2015-06-16 US disclosed
US-8871421-B2 Positive resist composition and method of pattern formation with the same FUJIFILM CORPORATION (JP) 2014-10-28 US disclosed
US-8697329-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2014-04-15 US disclosed
EP-2019334-A2 Positive resist composition and method of pattern formation with the same Fujifilm Corporation (JP) 2009-01-28 EP disclosed
US-20080305433-A1 POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME FUJIFILM CORPORATION (JP) 2008-12-11 US disclosed
US-20080171287-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-07-17 US disclosed
US-7368220-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2008-05-06 US disclosed
US-20070178405-A1 Positive resist composition and method of pattern formation with the same FUJI PHOTO FILM CO., LTD. 2007-08-02 US disclosed
US-20070172769-A1 Pattern forming method FUJIFILM CORPORATION (JP) 2007-07-26 US disclosed
EP-1811339-A1 Pattern forming method Fujifilm Corporation (JP) 2007-07-25 EP disclosed
US-20070148589-A1 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2007-06-28 US disclosed
EP-1795963-A1 Positive resist composition and pattern forming method using the same Fujifilm Corporation (JP) 2007-06-13 EP disclosed
EP-1754999-A2 Positive resist composition and method of pattern formation with the same Fuji Photo Film Co., Ltd. (JP) 2007-02-21 EP disclosed