SCHEMBL2686589

SCHEMBL2686589

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nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30009849 0.87
SCHEMBL10711211 0.87
SCHEMBL31651403 0.87
SCHEMBL4252984 0.87
SCHEMBL10710594 0.87
SCHEMBL4588448 0.82
SCHEMBL82413 0.82
SCHEMBL18204297 0.82
SCHEMBL9690693 0.82
SCHEMBL313854 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 74 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024198492-A1 MAGNETIC COMPENSATION MTJ DEVICE, MANUFACTURING METHOD THEREFOR, AND MRAM DEVICE 浙江驰拓科技有限公司 2024-10-03 WO claimed
CN-118742190-A Magnetic compensation MTJ device, manufacturing method thereof and MRAM device 浙江驰拓科技有限公司 2024-10-01 CN claimed
CN-106910899-B Preparation method of nitrogen-doped double-shell structure nano catalyst 广西大学 2020-07-03 CN claimed
US-9721592-B1 Perpendicular magnetic recording head with trailing gap covering magnetic pole and side gaps and method of manufacturing same TDK CORPORATION (JP) 2017-08-01 US claimed
CN-106910899-A A kind of preparation method of N doping bivalve Rotating fields nanocatalyst 广西大学 2017-06-30 CN claimed
US-12581210-B2 Thermal image sensor and electronic device including the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-03-17 US disclosed
US-12504329-B2 Long-wave infrared sensor and electronic device including the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2025-12-23 US disclosed
US-20250386514-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE SAMSUNG ELECTRONICS CO LTD (KR) 2025-12-18 US disclosed
US-20250331427-A1 MAGNETIC MEMORY DEVICE SAMSUNG ELECTRONICS CO., LTD. (KR) 2025-10-23 US disclosed
US-12339170-B2 Long wavelength infrared sensor and electronic device including the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2025-06-24 US disclosed
US-20250151627-A1 METHOD OF MANUFACTURING MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE SAMSUNG ELECTRONICS CO., LTD. (KR) 2025-05-08 US disclosed
WO-2024198492-A1 MAGNETIC COMPENSATION MTJ DEVICE, MANUFACTURING METHOD THEREFOR, AND MRAM DEVICE 浙江驰拓科技有限公司 2024-10-03 WO disclosed
EP-1918946-A1 Magnetic film for magnetic device Fujitsu Ltd. (JP) 2008-05-07 EP disclosed
WO-2008033113-A2 ELECTROCATALYSTS HAVING GOLD MONOLAYERS ON PLATINUM NANOPARTICLE CORES, AND USES THEREOF BROOKHAVEN SCIENCE ASSOCIATES (US) 2008-03-20 WO disclosed
EP-1849201-A2 PALLADIUM-COBALT PARTICLES AS OXYGEN-REDUCTION ELECTROCATALYSTS Brookhaven Science Associates (US) 2007-10-31 EP disclosed
US-20070026292-A1 Electrocatalysts having gold monolayers on platinum nanoparticle cores, and uses thereof ENERGY, UNITED STATES DEPARTMENT OF 2007-02-01 US disclosed
WO-2006086457-A2 PALLADIUM-COBALT PARTICLES AS OXYGEN-REDUCTION ELECTROCATALYSTS BROOKHAVEN SCIENCE ASSOCIATES (US) 2006-08-17 WO disclosed
US-20060177728-A1 Palladium-cobalt particles as oxygen-reduction electrocatalysts UNITED STATES DEPARTMENT OF ENERGY 2006-08-10 US disclosed
EP-1605475-A1 Magnetic film for magnetic device FUJITSU LIMITED (JP) 2005-12-14 EP disclosed
US-20050271901-A1 Magnetic film for magnetic device FUJITSU LIMITED 2005-12-08 US disclosed