Octane

Octane

SCHEMBL2701191

CCCCCCCC.[Ni]

nearest known ligand 0.00

Full drug profile on Sugi Atlas →

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Hexadecane SCHEMBL28152500 1.00 TSHR (0.89)
Hexane SCHEMBL23530150 0.94
SCHEMBL6040187 0.94 TSHR (1.00)
Heptane SCHEMBL10948326 0.94 TSHR (1.00)
Decane SCHEMBL170135 0.94 TSHR (1.00)
Decane SCHEMBL23499900 0.94 TSHR (1.00)
SCHEMBL23854647 0.94 TSHR (1.00)
Hexadecane SCHEMBL23499901 0.94 TSHR (1.00)
Undecane SCHEMBL20767628 0.94 TSHR (1.00)
Tetradecane SCHEMBL25387874 0.94 TSHR (1.00)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8933181-B2 Branched polymers and methods for their synthesis and use BRIDGESTONE CORPORATION (JP) 2015-01-13 US disclosed
US-20120108755-A1 BRANCHED POLYMERS AND METHODS FOR THEIR SYNTHESIS AND USE BRIDGESTONE CORPORATION (JP) 2012-05-03 US disclosed
CN-1320598-C Manufacturing method of semiconductor device SEMICONDUCTOR ENERGY LAB (JP) 2007-06-06 CN disclosed
CN-1244161-C Method for manufacturing semiconductor device SEMICONDUCTOR ENERGY LAB (JP) 2006-03-01 CN disclosed
US-6987036-B2 Method for forming crystalline semiconductor film and apparatus for forming the same SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2006-01-17 US disclosed
CN-1619771-A Manufacturing method of semiconductor device SEMICONDUCTOR ENERGY LAB (JP) 2005-05-25 CN disclosed
CN-1540721-A Semiconductor and process for fabricating same ��ʽ����뵼����Դ�о��� 2004-10-27 CN disclosed
US-20030032267-A1 Method for forming crystalline semiconductor film and apparatus for forming the same SEMICONDUCTOR ENERGY LABORATOY CO., LTD. (JP) 2003-02-13 US disclosed
CN-1396664-A Method for manufacturing semiconductor device SEMICONDUCTOR ENERGY LAB (JP) 2003-02-12 CN disclosed
CN-1097298-C Method of making crystal silicon semiconductor and thin film transistor SEMICONDUCTOR ENERGY LAB (JP) 2002-12-25 CN disclosed
CN-1088255-C Method for manufacturing semiconductor device SEMICONDUCTOR ENERGY LAB (JP) 2002-07-24 CN disclosed
CN-1291785-A Manufacturing method of semiconductor device SEMICONDUCTOR ENERGY LAB (JP) 2001-04-18 CN disclosed
CN-1058583-C Method for manufacturing semiconductor SEMICONDUCTOR ENERG LAB CO LTD (JP) 2000-11-15 CN disclosed
CN-1264180-A Semiconductor device and method for manufacturing the same SEMICONDUCTOR ENERGY LAB (JP) 2000-08-23 CN disclosed
CN-1131342-A Method of making crystal silicon semiconductor and thin film transistor SEMICONDUCTOR ENERGY LAB (JP) 1996-09-18 CN disclosed
CN-1123463-A Method for manufacturing semiconductor device SEMICONDUCTOR ENERGY LAB (JP) 1996-05-29 CN disclosed
CN-1098556-A Semiconductor and method for manufacturing the same SEMICONDUCTOR ENERGY LAB (JP) 1995-02-08 CN disclosed
US-4231757-A OIL ADDITIVES; DETERGENTS; ANTISLUDGE AGENTS THE LUBRIZOL CORPORATION (US) 1980-11-04 US disclosed