SCHEMBL2723985

SCHEMBL2723985

C[SiH2]C[SiH2]C[SiH2]C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15325023 0.79
SCHEMBL512266 0.78
SCHEMBL20240849 0.57
SCHEMBL27941492 0.57
SCHEMBL208611 0.56
SCHEMBL8375510 0.53
SCHEMBL12769065 0.53
SCHEMBL21773390 0.53
SCHEMBL28364192 0.53
SCHEMBL2406650 0.53

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 49 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9181283-B2 Methods of preparing low molecular weight carbosilanes and precursors thereof GELEST TECHNOLOGIES, INC. (US) 2015-11-10 US claimed
US-20150057462-A1 METHODS OF PREPARING LOW MOLECULAR WEIGHT CARBOSILANES AND PRECURSORS THEREOF GELEST, INC. 2015-02-26 US claimed
US-20130274497-A1 LOW MOLECULAR WEIGHT CARBOSILANES, PRECURSORS THEREOF, AND METHODS OF PREPARATION GELEST TECHNOLOGIES, INC. (US) 2013-10-17 US claimed
US-8440571-B2 Methods for deposition of silicon carbide and silicon carbonitride films APPLIED MATERIALS, INC. (US) 2013-05-14 US claimed
US-20120122302-A1 Apparatus And Methods For Deposition Of Silicon Carbide And Silicon Carbonitride Films APPLIED MATERIALS, INC. (US) 2012-05-17 US claimed
WO-2012061593-A2 APPARATUS AND METHODS FOR DEPOSITION OF SILICON CARBIDE AND SILICON CARBONITRIDE FILMS APPLIED MATERIALS, INC. (US) 2012-05-10 WO claimed
EP-1305823-A4 PROCESS FOR GROWING A MAGNESIUM OXIDE FILM ON A SILICON (100) SUBSTRATE COATED WITH A CUBIC SILICON CARBIDE BUFFER LAYER KOREA RES INST CHEM TECH (KR) 2006-07-05 EP claimed
US-6800133-B1 Process for growing a magnesium oxide film on a silicon (100) substrate coated with a cubic silicon carbide butter layer KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY (KR) 2004-10-05 US claimed
EP-1305823-A1 PROCESS FOR GROWING A MAGNESIUM OXIDE FILM ON A SILICON (100) SUBSTRATE COATED WITH A CUBIC SILICON CARBIDE BUFFER LAYER Korea Research Institute of Chemical Technology (KR) 2003-05-02 EP claimed
WO-2002013246-A1 PROCESS FOR GROWING A MAGNESIUM OXIDE FILM ON A SILICON (100) SUBSTRATE COATED WITH A CUBIC SILICON CARBIDE BUFFER LAYER KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY (KR) 2002-02-14 WO claimed
EP-0723600-B1 PROCESS FOR THE PREPARATION OF SILICON CARBIDE FILMS USING SINGLE ORGANOSILICON COMPOUNDS KOREA RES INST CHEM TECH (KR) 1999-07-07 EP claimed
EP-0723600-A1 PROCESS FOR THE PREPARATION OF SILICON CARBIDE FILMS USING SINGLE ORGANOSILICON COMPOUNDS KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY (KR) 1996-07-31 EP claimed
WO-1995010638-A1 PROCESS FOR THE PREPARATION OF SILICON CARBIDE FILMS USING SINGLE ORGANOSILICON COMPOUNDS KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY (KR) 1995-04-20 WO claimed
US-5138080-A One step;dechlorinating mixture of chlorosilaalkane and organochlorosilane KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY (KR) 1992-08-11 US claimed
US-5075477-A Direct synthesis of methylchlorosilaakanes KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY (KR) 1991-12-24 US claimed
JP-6340676-A None JP disclosed
JP-5093073-A None JP disclosed
JP-H0593073-A PRODUCTION OF POLYSILAMELHYLENENOSILANE POLYMER OR COPOLYMER KOREA ADVANCED INST OF SCI TECHNOL 1993-04-16 JP disclosed
US-5138080-A One step;dechlorinating mixture of chlorosilaalkane and organochlorosilane KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY (KR) 1992-08-11 US disclosed
US-5075477-A Direct synthesis of methylchlorosilaakanes KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY (KR) 1991-12-24 US disclosed