SCHEMBL2739902

SCHEMBL2739902

CC(=O)OCOCC1CC2CC1C1CCCC21

nearest known ligand 0.33

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CHRM1 P11229 1/20 0.33
MAPT P10636 3/20 0.33
CA12 O43570 2/20 0.33
GMNN O75496 2/20 0.33
ALDH1A1 P00352 2/20 0.33
CA1 P00915 2/20 0.33
CA2 P00918 2/20 0.33
LMNA P02545 2/20 0.33
BLM P54132 2/20 0.33
CA9 Q16790 2/20 0.33
TDP1 Q9NUW8 2/20 0.33
SGMS1 Q86VZ5 1/20 0.33
SGMS2 Q8NHU3 1/20 0.33
KDM4E B2RXH2 1/20 0.32
MEN1 O00255 1/20 0.32
TP53 P04637 1/20 0.32
CYP3A4 P08684 1/20 0.32
CYP2C9 P11712 1/20 0.32
ALOX15 P16050 1/20 0.32
TSHR P16473 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18222829 0.88 CHRM1 (0.40) CHRM1MAPTCA12GMNNALDH1A1
SCHEMBL2739901 0.78
SCHEMBL12641415 0.77 ALDH1A1 (0.44) CHRM1MAPTCA12GMNNALDH1A1
SCHEMBL11965854 0.76 MAPT (0.35) MAPTCA12GMNNALDH1A1CA1
SCHEMBL2739874 0.76 MAPT (0.44) CHRM1MAPTCA12GMNNALDH1A1
SCHEMBL18222843 0.76 CHRM1 (0.34) CHRM1MAPTCA12GMNNALDH1A1
SCHEMBL11965880 0.74 CHRM1 (0.36) CHRM1MAPTCA12GMNNALDH1A1
SCHEMBL14491530 0.73 MAPT (0.34) MAPTCA12GMNNALDH1A1CA1
SCHEMBL14890141 0.73 MAPT (0.35) MAPTCA12GMNNALDH1A1CA1
SCHEMBL23872913 0.72 HMGCR (0.34) MAPTCA12GMNNALDH1A1CA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9188857-B2 Resist polymer, process for production thereof, resist composition, and process for production of substrates with patterns thereon MITSUBISHI RAYON CO., LTD. (JP) 2015-11-17 US disclosed
US-20130252181-A1 RESIST POLYMER, PROCESS FOR PRODUCTION THEREOF, RESIST COMPOSITION, AND PROCESS FOR PRODUCTION OF SUBSTRATES WITH PATTERNS THEREON MITSUBISHI RAYON CO., LTD. (JP) 2013-09-26 US disclosed
US-8476401-B2 Resist polymer, process for production thereof, resist composition, and process for production of substrated with patterns thereon MITSUBISHI RAYON CO., LTD. (JP) 2013-07-02 US disclosed
US-8241829-B2 Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer MITSUBISHI RAYON CO., LTD. (JP) 2012-08-14 US disclosed
US-8114949-B2 (Meth)acrylate, polymer and resist composition MITSUBISHI RAYON CO., LTD. (JP) 2012-02-14 US disclosed
US-8088875-B2 (Meth)acrylate, polymer and resist composition MITSUBISHI RAYON CO., LTD. (JP) 2012-01-03 US disclosed
US-8049042-B2 Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer MITSUBISHI RAYON CO., LTD. (JP) 2011-11-01 US disclosed
US-20110144295-A1 RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER MITSUBISHI RAYON CO., LTD. (JP) 2011-06-16 US disclosed
US-20090226851-A1 (METH)ACRYLATE, POLYMER AND RESIST COMPOSITION MITSUBISHI RAYON CO., LTD. (JP) 2009-09-10 US disclosed
US-20090198065-A1 RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER MITSUBISHI RAYON CO., LTD. (JP) 2009-08-06 US disclosed
US-20080032241-A1 Resist Polymer, Process For Production Thereof, Resist Composition, And Process For Production Of Substrated With Patterns Thereon MITSUBISHI RAYON CO., LTD. (JP) 2008-02-07 US disclosed
US-20080032241-A1 Resist Polymer, Process For Production Thereof, Resist Composition, And Process For Production Of Substrated With Patterns Thereon MITSUBISHI RAYON CO., LTD. (JP) 2008-02-07 US disclosed
US-20080003529-A1 (Meth)Acrylate, Polymer and Resist Composition MITSUBISHI RAYON CO., LTD. (JP) 2008-01-03 US disclosed
US-20070190449-A1 Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer MITSUBISHI RAYON CO., LTD. (JP) 2007-08-16 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20090198065-A1 RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER CHRM1, CHRM2, PKN2 CHRM1 1/4885MAPT 2060/4885CA12 4192/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.