SCHEMBL2740751

SCHEMBL2740751

C=C(C)C(=O)OC(C)OC1CC2CCC1C2

nearest known ligand 0.37

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
ATM Q13315 1/20 0.37
CYP19A1 P11511 1/20 0.32
LMNA P02545 1/20 0.32
HPGD P15428 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
GRM1 Q13255 2/20 0.31
TSHR P16473 1/20 0.31
IRAK4 Q9NWZ3 3/20 0.31
PDE4A P27815 3/20 0.30
PDE4B Q07343 3/20 0.30
PDE4C Q08493 3/20 0.30
PDE4D Q08499 3/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14065405 1.00 ATM (0.37) ATMCYP19A1LMNAHPGDSMN1; SMN2
SCHEMBL2739851 0.84 ATM (0.41) ATMCYP19A1LMNAHPGDSMN1; SMN2
SCHEMBL15082132 0.83 ATM (0.37) ATM
SCHEMBL15279601 0.80 ATM (0.40) ATMCYP19A1LMNAHPGDSMN1; SMN2
SCHEMBL13385122 0.79 ATM (0.43) ATMCYP19A1LMNAHPGDSMN1; SMN2
SCHEMBL16168301 0.78 ATM (0.50) ATMCYP19A1GRM1PDE4APDE4B
SCHEMBL75299 0.78 ATM (0.50) ATMCYP19A1GRM1PDE4APDE4B
SCHEMBL16188010 0.78 ATM (0.50) ATMCYP19A1GRM1PDE4APDE4B
SCHEMBL2740747 0.77 HSD11B1 (0.33) TSHR
SCHEMBL2735082 0.76 CYP19A1 (0.33) ATMCYP19A1GRM1TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 165 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10423068-B2 Active-light-sensitive or radiation-sensitive resin composition, active-light-sensitive or radiation-sensitive film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2019-09-24 US disclosed
US-9958775-B2 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blanks including actinic ray-sensitive or radiation-sensitive film, pattern forming method and photomask FUJIFILM CORPORATION (JP) 2018-05-01 US disclosed
US-9958775-B2 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blanks including actinic ray-sensitive or radiation-sensitive film, pattern forming method and photomask FUJIFILM CORPORATION (JP) 2018-05-01 US disclosed
US-20170242338-A1 ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-08-24 US disclosed
US-20170242338-A1 ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-08-24 US disclosed
US-20170176858-A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2017-06-22 US disclosed
US-20170176858-A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2017-06-22 US disclosed
US-9612535-B2 Pattern forming method, electron beam- or extreme ultraviolet-sensitive resin composition, resist film using the same, method of manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2017-04-04 US disclosed
US-9612535-B2 Pattern forming method, electron beam- or extreme ultraviolet-sensitive resin composition, resist film using the same, method of manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2017-04-04 US disclosed
US-9500951-B2 Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-11-22 US disclosed
US-7189492-B2 Photosensitive composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-03-13 US disclosed
US-7189492-B2 Photosensitive composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-03-13 US disclosed
US-20070042291-A1 Positive resist composition and a pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-02-22 US disclosed
US-20070042291-A1 Positive resist composition and a pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-02-22 US disclosed
EP-1755000-A2 Positive resist composition and a pattern forming method using the same Fuji Photo Film Co., Ltd. (JP) 2007-02-21 EP disclosed
US-7179578-B2 Positive resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed
US-7179578-B2 Positive resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed
US-7179579-B2 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed
US-7179579-B2 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed
EP-1752479-A1 ACRYLIC STAR POLYMER NIPPON SODA CO., LTD. (JP) 2007-02-14 EP disclosed