⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2770121 | 0.82 | — | — | |
| SCHEMBL13089548 | 0.81 | — | — | |
| SCHEMBL2769489 | 0.79 | — | — | |
| SCHEMBL28452309 | 0.77 | — | — | |
| SCHEMBL13089561 | 0.75 | — | — | |
| SCHEMBL3482206 | 0.75 | ADRB2 (0.32) | — | |
| SCHEMBL309363 | 0.73 | — | — | |
| SCHEMBL2773214 | 0.73 | — | — | |
| SCHEMBL1322873 | 0.73 | — | — | |
| SCHEMBL8359623 | 0.73 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-114616652-A | Monoalkoxysilanes and dense organosilica films prepared therefrom | 弗萨姆材料美国有限责任公司 | 2022-06-10 | — | — | CN | claimed |
| US-10995249-B2 | Tire with reduced cavity noise | HANKOOK TIRE CO., LTD. | 2021-05-04 | — | — | US | disclosed |
| US-10947430-B2 | Tire with reduced cavity noise | HANKOOK TIRE CO., LTD. | 2021-03-16 | — | — | US | disclosed |
| CN-108688415-B | Cavity noise reduction tire | 韩国轮胎株式会社 | 2020-08-21 | — | — | CN | disclosed |
| CN-108068561-B | Cavity Noise reduction tire | 韩国轮胎株式会社 | 2019-11-26 | — | — | CN | disclosed |
| EP-3321108-B1 | TIRE WITH REDUCED CAVITY NOISE | HANKOOK TIRE CO LTD (KR) | 2019-05-15 | — | — | EP | disclosed |
| CN-108688415-A | Cavity Noise reduction tire | 韩国轮胎株式会社 | 2018-10-23 | — | — | CN | disclosed |
| US-20180282600-A1 | TIRE WITH REDUCED CAVITY NOISE | HANKOOK TIRE CO., LTD. (KR) | 2018-10-04 | — | — | US | disclosed |
| EP-3381712-A1 | TIRE WITH REDUCED CAVITY NOISE | Hankook Tire Co., Ltd. (KR) | 2018-10-03 | — | — | EP | disclosed |
| CN-108068561-A | Cavity Noise reduction tire | 韩国轮胎株式会社 | 2018-05-25 | — | — | CN | disclosed |
| US-9733397-B2 | Anti-reflection coat and optical device | TAMRON CO., LTD. (JP) | 2017-08-15 | — | — | US | disclosed |
| CN-103185905-B | Antireflection film and optical element | TOTATSU CORP. (JP) | 2015-12-23 | — | — | CN | disclosed |
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| US-8546597-B2 | Organic silane compound for forming Si-containing film by plasma CVD and method for forming Si-containing film | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2013-10-01 | — | — | US | disclosed |
| EP-2194060-B1 | Organic silane compounds for forming silicon-containing films by plasma CVD and method for forming silicon-containing films | SHINETSU CHEMICAL CO (JP) | 2013-07-17 | — | — | EP | disclosed |
| EP-2194060-A1 | Organic silane compounds for forming silicon-containing films by plasma CVD and method for forming silicon-containing films | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-06-09 | — | — | EP | disclosed |
| US-20100137626-A1 | ORGANIC SILANE COMPOUND FOR FORMING SI-CONTAINING FILM BY PLASMA CVD AND METHOD FOR FORMING SI-CONTAINING FILM | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-03 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |