SCHEMBL27765261

SCHEMBL27765261

CCC1=C([Co])CC=C1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10416049 0.76 ACHE (0.32)
SCHEMBL958607 0.75
SCHEMBL3853198 0.72
SCHEMBL1485897 0.72
SCHEMBL924241 0.72
SCHEMBL8575865 0.72
SCHEMBL18076018 0.72
SCHEMBL2591738 0.72
SCHEMBL4477480 0.72
SCHEMBL3137742 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240218503-A1 SELECTIVE COBALT DEPOSITION ON COPPER SURFACES APPLIED MATERIALS, INC. 2024-07-04 US claimed
US-11959167-B2 Selective cobalt deposition on copper surfaces APPLIED MATERIALS, INC. (US) 2024-04-16 US claimed
US-20220298625-A1 SELECTIVE COBALT DEPOSITION ON COPPER SURFACES APPLIED MATERIALS, INC. 2022-09-22 US claimed
US-11384429-B2 Selective cobalt deposition on copper surfaces APPLIED MATERIALS, INC. (US) 2022-07-12 US claimed
US-12564025-B2 Interconnect with redeposited metal capping and method forming same TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2026-02-24 US disclosed
US-20240218503-A1 SELECTIVE COBALT DEPOSITION ON COPPER SURFACES APPLIED MATERIALS, INC. 2024-07-04 US disclosed
US-20240213088-A1 SUBTRACTIVE METALS AND SUBTRACTIVE METAL SEMICONDUCTOR STRUCTURES APPLIED MATERIALS, INC. 2024-06-27 US disclosed
US-11990368-B2 Doped selective metal caps to improve copper electromigration with ruthenium liner APPLIED MATERIALS, INC. (US) 2024-05-21 US disclosed
US-11959167-B2 Selective cobalt deposition on copper surfaces APPLIED MATERIALS, INC. (US) 2024-04-16 US disclosed
US-11923244-B2 Subtractive metals and subtractive metal semiconductor structures APPLIED MATERIALS, INC. (US) 2024-03-05 US disclosed
US-11875987-B2 Contacts having a geometry to reduce resistance INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2024-01-16 US disclosed
US-20230048536-A1 Interconnect with Redeposited Metal Capping and Method Forming Same TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2023-02-16 US disclosed
US-11373903-B2 Doped selective metal caps to improve copper electromigration with ruthenium liner APPLIED MATERIALS, INC. (US) 2022-06-28 US disclosed
CN-107078036-B Method for thermally forming selective cobalt layer 应用材料公司 2021-03-30 CN disclosed
CN-106024598-B Cobalt deposition on barrier surfaces 应用材料公司 2020-11-20 CN disclosed
CN-106463396-B Dielectric/metal barrier integration to prevent copper diffusion 应用材料公司 2020-03-10 CN disclosed
CN-106415829-A Protective via cap for improved interconnect performance 应用材料公司 2017-02-15 CN disclosed
CN-101466863-B Process for forming cobalt-containing materials APPLIED MATERIALS INC 2011-08-10 CN disclosed
CN-101578390-A Cobalt-containing film-forming material and method for forming cobalt silicide film using the material SHOWA DENKO KK (JP) 2009-11-11 CN disclosed
CN-101466863-A Process for forming cobalt-containing materials APPLIED MATERIALS INC (US) 2009-06-24 CN disclosed