SCHEMBL2776997

SCHEMBL2776997

C=C(C)C(=O)OC1CCCc2ccccc21.OC=Cc1ccccc1

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 1/20 0.46
IDO1 P14902 2/20 0.42
CHRM4 P08173 1/20 0.40
DRD2 P14416 1/20 0.40
HTR7 P34969 1/20 0.40
TAS1R3 Q7RTX0 2/20 0.39
TAS1R1 Q7RTX1 2/20 0.39
HTT P42858 1/20 0.39
FFAR1 O14842 1/20 0.39
CTSV O60911 1/20 0.38
CTSL P07711 1/20 0.38
CTSS P25774 1/20 0.38
CTSK P43235 1/20 0.38
KMT2A Q03164 2/20 0.37
MEN1 O00255 1/20 0.37
TAS1R2 Q8TE23 1/20 0.37
MAPK1 P28482 1/20 0.36
MAPK14 Q16539 1/20 0.36
ALDH1A1 P00352 1/20 0.36
HSD17B10 Q99714 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2774502 0.93 SMN1; SMN2 (0.40) SMN1; SMN2IDO1CHRM4DRD2HTR7
SCHEMBL29733350 0.88 IDO1 (0.53) IDO1CHRM4DRD2HTR7TAS1R3
SCHEMBL2190894 0.88 IDO1 (0.53) IDO1CHRM4DRD2HTR7TAS1R3
SCHEMBL2192860 0.84 IDO1 (0.48) IDO1CHRM4DRD2HTR7TAS1R3
SCHEMBL2190012 0.83 IDO1 (0.47) IDO1CHRM4DRD2HTR7TAS1R3
SCHEMBL19771575 0.83 IDO1 (0.47) IDO1CHRM4DRD2HTR7TAS1R3
SCHEMBL2188983 0.80 IDO1 (0.50) IDO1CHRM4DRD2HTR7FFAR1
SCHEMBL30290988 0.75 IDO1 (0.58) IDO1CHRM4DRD2HTR7TAS1R3
SCHEMBL4455923 0.75 IDO1 (0.58) IDO1CHRM4DRD2HTR7TAS1R3
SCHEMBL13923308 0.73 CHRM4 (0.40) CHRM4DRD2HTR7TAS1R3TAS1R1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8841061-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-09-23 US disclosed
US-8808966-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-08-19 US disclosed
US-8574817-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-11-05 US disclosed
US-8450042-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-28 US disclosed
US-20130084527-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-04 US disclosed
US-20130084528-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-04 US disclosed
US-20130084529-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-04 US disclosed
US-20130029269-A1 POSITIVE RESIST COMPOSITION AND PATTTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-31 US disclosed
US-8211618-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-07-03 US disclosed
US-20100227274-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-09-09 US disclosed
US-20100227273-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-09-09 US disclosed