SCHEMBL2188983

SCHEMBL2188983

C=C(C)C(=O)OC1CCc2ccccc21

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
IDO1 P14902 4/20 0.50
PIN1 Q13526 3/20 0.45
CHRM4 P08173 3/20 0.43
DRD2 P14416 3/20 0.43
HTR7 P34969 3/20 0.43
FFAR1 O14842 3/20 0.41
HTR2C P28335 1/20 0.41
OPRM1 P35372 1/20 0.41
DRD3 P35462 1/20 0.41
AVPR1A P37288 1/20 0.41
OPRK1 P41145 1/20 0.41
CTSV O60911 1/20 0.40
CTSL P07711 1/20 0.40
CTSS P25774 1/20 0.40
CTSK P43235 1/20 0.40
PDE4A P27815 1/20 0.40
PDE4B Q07343 1/20 0.40
PDE4C Q08493 1/20 0.40
PDE4D Q08499 1/20 0.40
PDPK1 O15530 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2190894 0.91 IDO1 (0.53) IDO1CHRM4DRD2HTR7FFAR1
SCHEMBL29733350 0.91 IDO1 (0.53) IDO1CHRM4DRD2HTR7FFAR1
SCHEMBL2192860 0.90 IDO1 (0.48) IDO1PIN1CHRM4DRD2HTR7
SCHEMBL2190012 0.89 IDO1 (0.47) IDO1PIN1CHRM4DRD2HTR7
SCHEMBL19771575 0.89 IDO1 (0.47) IDO1PIN1CHRM4DRD2HTR7
SCHEMBL2774502 0.88 SMN1; SMN2 (0.40) IDO1PIN1CHRM4DRD2HTR7
SCHEMBL2774500 0.87 PIN1 (0.41) IDO1PIN1CHRM4DRD2HTR7
SCHEMBL16866687 0.84 POLB (0.38) IDO1PIN1
SCHEMBL30908530 0.84 IDO1 (0.56) IDO1PIN1CHRM4DRD2HTR7
SCHEMBL817976 0.84 IDO1 (0.56) IDO1PIN1CHRM4DRD2HTR7

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8501384-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-06 US disclosed
US-8288072-B2 Antireflection film; fast etching speed whcih reduces deformation; accuracy; 2,3-epoxypropyl methacrylate ester-styrene copolymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-10-16 US disclosed
US-8288072-B2 Antireflection film; fast etching speed whcih reduces deformation; accuracy; 2,3-epoxypropyl methacrylate ester-styrene copolymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-10-16 US disclosed
US-20110171580-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-07-14 US disclosed
US-20100227274-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-09-09 US disclosed
US-20100227274-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-09-09 US disclosed
US-7687228-B2 Antireflection film composition and patterning process using the same SHIN ETSU CHEMICAL CO., LTD. (JP) 2010-03-30 US disclosed
US-7687228-B2 Antireflection film composition and patterning process using the same SHIN ETSU CHEMICAL CO., LTD. (JP) 2010-03-30 US disclosed
US-20080227037-A1 Resist lower layer film composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-09-18 US disclosed
US-20080227037-A1 Resist lower layer film composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-09-18 US disclosed
US-20080220381-A1 Antireflection film composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-09-11 US disclosed
US-20080220381-A1 Antireflection film composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-09-11 US disclosed