Zinc Ion

Zinc Ion

SCHEMBL2780489

[Al+3].[Al+3].[S-2].[S-2].[S-2].[S-2].[S-2].[Zn+2].[Zn+2]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Zinc Ion SCHEMBL30772418 1.00
Zinc Ion SCHEMBL9464232 0.87
Zinc Ion SCHEMBL20838208 0.87
SCHEMBL180562 0.82
Zinc Ion SCHEMBL4757897 0.82 GPR39 (0.33)
Zinc Ion SCHEMBL27539 0.82
Zinc Ion SCHEMBL7794532 0.82 GPR39 (0.33)
Zinc Ion SCHEMBL634081 0.82
Zinc Ion SCHEMBL10427052 0.82 GPR39 (0.33)
Zinc Ion SCHEMBL7744965 0.82 GPR39 (0.33)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-117504954-A Microfluidic chip 北京大学深圳研究生院 2024-02-06 CN claimed
WO-2024021035-A1 MICROFLUIDIC CHIP 北京大学深圳研究生院 2024-02-01 WO claimed
CN-116963517-A Alternating current driven electroluminescent device based on zwitterionic polymer and preparation method thereof 北京大学深圳研究生院 2023-10-27 CN claimed
CN-117504954-A Microfluidic chip 北京大学深圳研究生院 2024-02-06 CN disclosed
CN-116963517-A Alternating current driven electroluminescent device based on zwitterionic polymer and preparation method thereof 北京大学深圳研究生院 2023-10-27 CN disclosed
CN-114130437-A Electroluminescent micro-fluidic liquid drop moving device 北京大学深圳研究生院 2022-03-04 CN disclosed
US-10756198-B2 Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same INTEL CORPORATION (US) 2020-08-25 US disclosed
US-20170365681-A1 FERMI-LEVEL UNPINNING STRUCTURES FOR SEMICONDUCTIVE DEVICES, PROCESSES OF FORMING SAME, AND SYSTEMS CONTAINING SAME INTEL CORP (US) 2017-12-21 US disclosed
US-9768269-B2 Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same INTEL CORPORATION (US) 2017-09-19 US disclosed
US-20150001644-A1 FERMI-LEVEL UNPINNING STRUCTURES FOR SEMICONDUCTIVE DEVICES, PROCESSES OF FORMING SAME, AND SYSTEMS CONTAINING SAME INTEL CORPORATION 2015-01-01 US disclosed
US-8878363-B2 Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same INTEL CORPORATION (US) 2014-11-04 US disclosed
US-20100327377-A1 Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same INTEL CORPORATION 2010-12-30 US disclosed
US-5270614-A Luminescent material SHARP KABUSHIKI KAISHA (JP) 1993-12-14 US disclosed
EP-0392776-B1 LUMINESCENT MATERIAL SHARP KABUSHIKI KAISHA (JP) 1993-06-30 EP disclosed
EP-0392776-A2 Luminescent material SHARP KABUSHIKI KAISHA (JP) 1990-10-17 EP disclosed