Fluoride

Fluoride

SCHEMBL27813664

CCCCCCCCCC[Si](C)(OC(C)C)OC(C)C.F

nearest known ligand 0.35

Full drug profile on Sugi Atlas →

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.35
TSHR P16473 1/20 0.35
THRB P10828 1/20 0.35
DNM1 Q05193 2/20 0.31
TRPM8 Q7Z2W7 4/20 0.30
OPRM1 P35372 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30354396 0.98 LMNA (0.36) LMNATSHRTHRBDNM1TRPM8
SCHEMBL8451699 0.98 LMNA (0.36) LMNATSHRTHRBDNM1TRPM8
SCHEMBL29012023 0.98 LMNA (0.36) LMNATSHRTHRBDNM1TRPM8
SCHEMBL14423295 0.89 LMNA (0.30) LMNA
SCHEMBL13416878 0.89
SCHEMBL28431540 0.88 LMNA (0.33) LMNATSHRTHRBOPRM1
SCHEMBL28416077 0.87 LMNA (0.34) LMNA
SCHEMBL28422728 0.87 LMNA (0.34) LMNA
SCHEMBL28891793 0.87 LMNA (0.34) LMNA
SCHEMBL706582 0.86

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-110402483-A Semiconductor element, compensated semiconductor device, the manufacturing method of semiconductor element, wireless communication device and Commercial goods labels TORAY INDUSTRIES 2019-11-01 CN disclosed
CN-109964327-A Field effect transistor, its manufacturing method, wireless telecom equipment and Commercial goods labels using it 东丽株式会社 2019-07-02 CN disclosed
CN-109716491-A The manufacturing method of field effect transistor and the manufacturing method of wireless telecom equipment 东丽株式会社 2019-05-03 CN disclosed
CN-108292630-A Ferroelectric memory element, its manufacturing method and using its storage unit and use its wireless communication device 东丽株式会社 2018-07-17 CN disclosed
CN-108140484-A Capacitor and its manufacturing method and use its wireless communication apparatus 东丽株式会社 2018-06-08 CN disclosed
CN-105190901-A Field effect transistor TORAY INDUSTRIES 2015-12-23 CN disclosed
CN-102089870-B Gate insulating material, gate insulating film, and organic field effect transistor TORAY INDUSTRIES 2013-08-28 CN disclosed
CN-102089870-A Gate insulating material, gate insulating film, and organic field effect transistor TORAY INDUSTRIES 2011-06-08 CN disclosed