SCHEMBL278345

SCHEMBL278345

[2H]Oc1ccc(C2(c3ccc(O[2H])c(C)c3)CCC(C(C)(C)C3CCC(c4ccc(O[2H])c(C)c4)(c4ccc(O[2H])c(C)c4)CC3)CC2)cc1C

nearest known ligand 0.50

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 4/20 0.50
ESR2 Q92731 3/20 0.50
LMNA P02545 2/20 0.32
ALOX12 P18054 2/20 0.32
ACHE P22303 1/20 0.32
NPSR1 Q6W5P4 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL278622 0.90 ESR1 (0.63) ESR1ESR2LMNAALOX12ACHE
SCHEMBL12606673 0.88 ESR1 (0.61) ESR1ESR2LMNAALOX12ACHE
SCHEMBL13410342 0.86 ESR1 (0.39) ESR1ESR2
SCHEMBL12606668 0.82 ESR1 (0.57) ESR1ESR2LMNAALOX12ACHE
SCHEMBL13411021 0.81 ESR1 (0.46) ESR1ESR2LMNAALOX12ACHE
SCHEMBL9075413 0.81 ESR1 (0.63) ESR1ESR2LMNAALOX12ACHE
SCHEMBL17636602 0.80 ESR1 (0.45) ESR1ESR2
SCHEMBL15372532 0.80 ESR2 (0.51) ESR1ESR2ACHE
SCHEMBL16313455 0.78 ESR1 (0.49) ESR1ESR2LMNAACHENPSR1
SCHEMBL12606670 0.77 ESR1 (0.58) ESR1ESR2LMNAACHENPSR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8173349-B2 Photosensitive resin composition, polymer compound, method of forming a pattern, and electronic device FUJIFILM CORPORATION (JP) 2012-05-08 US disclosed
US-8133550-B2 Good breaking elongation characteristics, achievable high sensitivity and high film remaining rate, little in pattern size fluctuation at the heating time after lithographic process, capable of stable pattern formation; manufacturing a semiconductor device FUJIFILM CORPORATION (JP) 2012-03-13 US disclosed
US-7598009-B2 Photosensitive resin composition, production method for cured relief pattern using it, and semiconductor device FUJIFILM CORPORATION (JP) 2009-10-06 US disclosed
US-20090035693-A1 PHOTOSENSITIVE RESIN COMPOSITION, PRODUCTION METHOD FOR CURED RELIEF PATTERN USING IT, AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2009-02-05 US disclosed
US-20080076849-A1 POLYBENZOXAZOLE PRECURSOR, PHOTOSENSITIVE RESIN COMPOSITION USING THE SAME, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2008-03-27 US disclosed