SCHEMBL278622

SCHEMBL278622

Cc1cc(C2(c3ccc(O)c(C)c3)CCC(C(C)(C)C3CCC(c4ccc(O)c(C)c4)(c4ccc(O)c(C)c4)CC3)CC2)ccc1O

nearest known ligand 0.63

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 11/20 0.63
ESR2 Q92731 9/20 0.63
ACHE P22303 1/20 0.38
TDP1 Q9NUW8 2/20 0.36
TP53 P04637 1/20 0.36
AR P10275 2/20 0.35
LMNA P02545 4/20 0.35
MEN1 O00255 2/20 0.35
MAPT P10636 2/20 0.35
KMT2A Q03164 2/20 0.35
NPSR1 Q6W5P4 2/20 0.35
XBP1 P17861 1/20 0.35
POLB P06746 1/20 0.35
SMN1; SMN2 Q16637 1/20 0.35
L3MBTL1 Q9Y468 1/20 0.35
PDE10A Q9Y233 1/20 0.34
ALOX12 P18054 2/20 0.34
OPRM1 P35372 1/20 0.31
OPRD1 P41143 1/20 0.31
OPRK1 P41145 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12606673 0.98 ESR1 (0.61) ESR1ESR2ACHETDP1TP53
SCHEMBL12606668 0.92 ESR1 (0.57) ESR1ESR2ACHETDP1TP53
SCHEMBL9075413 0.91 ESR1 (0.63) ESR1ESR2ACHETDP1TP53
SCHEMBL278345 0.90 ESR1 (0.50) ESR1ESR2ACHELMNANPSR1
SCHEMBL15372532 0.89 ESR2 (0.51) ESR1ESR2ACHE
SCHEMBL13411021 0.88 ESR1 (0.46) ESR1ESR2ACHELMNAALOX12
SCHEMBL16313455 0.87 ESR1 (0.49) ESR1ESR2ACHETDP1LMNA
SCHEMBL17636602 0.87 ESR1 (0.45) ESR1ESR2TDP1MEN1KMT2A
SCHEMBL12606670 0.87 ESR1 (0.58) ESR1ESR2ACHETDP1TP53
SCHEMBL9073420 0.85 ESR1 (0.56) ESR1ESR2ACHEARLMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 93 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240210827-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING CURED RELIEF PATTERN, AND SEMICONDUCTOR APPARATUS ASAHI KASEI KABUSHIKI KAISHA (JP) 2024-06-27 US disclosed
US-20240210827-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING CURED RELIEF PATTERN, AND SEMICONDUCTOR APPARATUS ASAHI KASEI KABUSHIKI KAISHA (JP) 2024-06-27 US disclosed
WO-2023195319-A1 POSITIVE PHOTOSENSITIVE PIGMENT COMPOSITION, CURED FILM CONTAINING CURED PRODUCT THEREOF, AND ORGANIC EL DISPLAY DEVICE 東レ株式会社 2023-10-12 WO disclosed
US-20200409263-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING CURED RELIEF PATTERN, AND SEMICONDUCTOR APPARATUS ASAHI KASEI KABUSHIKI KAISHA (JP) 2020-12-31 US disclosed
US-10831101-B2 Photosensitive resin composition, method for manufacturing cured relief pattern, and semiconductor apparatus ASAHI KASEI KABUSHIKI KAISHA (JP) 2020-11-10 US disclosed
US-10289002-B2 Electron beam resist underlayer film-forming composition containing lactone-structure-containing polymer NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2019-05-14 US disclosed
US-20190113845-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING CURED RELIEF PATTERN, AND SEMICONDUCTOR APPARATUS ASAHI KASEI KABUSHIKI KAISHA (JP) 2019-04-18 US disclosed
US-10042247-B2 Mask blank, method for manufacturing mask blank and transfer mask HOYA CORPORATION (JP) 2018-08-07 US disclosed
US-10042247-B2 Mask blank, method for manufacturing mask blank and transfer mask HOYA CORPORATION (JP) 2018-08-07 US disclosed
US-9822237-B2 Resin composition, film, polarizing plate protective film, polarizing plate, liquid crystal display device, and bis type alicyclic cardo phenol compound FUJIFILM CORPORATION (JP) 2017-11-21 US disclosed
US-20080227024-A1 PHOTOSENSITIVE COMPOSITION, AND CURED RELIEF PATTERN PRODUCTION METHOD AND SEMICONDUCTOR DEVICE USING THE SAME FUJIFILM CORPORATION (JP) 2008-09-18 US disclosed
US-7368216-B2 Photosensitive resin composition and manufacturing method of semiconductor device using the same FUJIFILM CORPORATION (JP) 2008-05-06 US disclosed
US-7368216-B2 Photosensitive resin composition and manufacturing method of semiconductor device using the same FUJIFILM CORPORATION (JP) 2008-05-06 US disclosed
US-20080081294-A1 PHOTOSENSITIVE RESIN COMPOSITION, PRODUCTION METHOD OF CURED RELIEF PATTERN USING THE SAME AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed
US-20080081294-A1 PHOTOSENSITIVE RESIN COMPOSITION, PRODUCTION METHOD OF CURED RELIEF PATTERN USING THE SAME AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed
US-20080076849-A1 POLYBENZOXAZOLE PRECURSOR, PHOTOSENSITIVE RESIN COMPOSITION USING THE SAME, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2008-03-27 US disclosed
US-20080076849-A1 POLYBENZOXAZOLE PRECURSOR, PHOTOSENSITIVE RESIN COMPOSITION USING THE SAME, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2008-03-27 US disclosed
US-20070172753-A1 Photosensitive resin composition and manufacturing method of semiconductor device using the same FUJIFILM CORPORATION (JP) 2007-07-26 US disclosed
US-20070172753-A1 Photosensitive resin composition and manufacturing method of semiconductor device using the same FUJIFILM CORPORATION (JP) 2007-07-26 US disclosed
US-20070128541-A1 Materials for photoresist, negative-tone photoresist composition, method of forming resist pattern, and semiconductor device HITACHI, LTD. (JP) 2007-06-07 US disclosed